- 《Nuclear Instruments & Methods in Physics Research》 被引量: 13发表: 2001年 Method for obtaining DC convergence for SOI FET models in a circuit simulation program A process for obtaining accurate DC convergence in a DC phase of a circuit simulation program for models of field effect ...
Forward gated-diode Recombination-Generation(R-G) current method is applied to an NMOSFET/SOI to measure the stress-induced interface traps in this letter... A Huang,H Jin,X Zhang - 《电子科学学刊(英文版)》 被引量: 8发表: 2002年 Nanoscale Multigate TiN Metal Nanocrystal Memory Using High...
A 3D memory device, the device including: a first horizontal bit-line; a second horizontal bit-line disposed above the first horizontal bit-line, where the first horizontal bit-line and the second horizontal bit-line function as a source or a drain for a plurality of parallel vertically-orien...
Performance evaluation of nanoscale halo dual-material double gate SiGe MOSFET using 2-D numerical simulation The recent interest in SiGe for multigate MOSFET design has demonstrated the possibility of alleviating many parasitic effects dominating at nanoscale regime. In the presented work, we focus on...
Precise technique finds FET thermal resistance A technique for calculating the thermal resistance of multigate flip-chip FET dice is developed and demonstrated. The method is based on the transmission-l... HF Cooke - 《Microwaves》 被引量: 91发表: 1986年 加载更多研究点推荐 semiconductor device ...