2.Liu et al. (2020). “Gate oxide reliability studies of commercial 1.2 kV 4H-SiC power MOSFETs.” IEEE International Reliability Physics Symposium (IRPS). 3.Xing et al. (2019). “Current saturation characteristics and single-pulse short-circuit tests of commercial SiC MOSFETs.” IEEE Energy ...
Figure 3(a) shows the device in the “Off” state with the gate, source and drain voltages at zero and the bulk substrate connected to ground. Two P-N junctions exist between the n-type source/drain regions and the bulk p-type substrate. In operation, the potential between the drain ...
1.Maddi et al. (2021). “The Road to a Robust and Affordable SiC Power MOSFET Technology.” Energies 2021. 2.Liu et al. (2020). “Gate oxide reliability studies of commercial 1.2 kV 4H-SiC power MOSFETs.” IEEE International Reliability Physics Symposium (IRPS). 3.Xing et al. (2019)...
具有更长载流子寿命空穴的出现使得BJT的开关速度比相同尺寸和相同额定电压的功率MOSFET慢几倍。此外，热失...
阈值电压 二极管正向电压 功率耗散 动态特性 栅极电荷 dv/dt 能力 尽管分立式功率MOSFET的几何结构，电压...
We deal successively with the following subjects: formation of an inversion layer, the ideal drain current, threshold voltage, carrier mobility in an inversion layer, the saturation mode, dynamic operation and inherent parasitics. Unless stated otherwise, the device structure considered here is that ...
Keywords:MOFETs;devicephysics;compactmodeling;surfacepotential;charge-sheetmodel !引言 简洁的MOSFET集约模型将电路设计和工艺制造过程紧 密地联系起来,在以CMOS为基础的IC产业发展中扮演着重 要角色研究器件集约模型的目标在于发展一组自恰、连续和 精确的基于器件物理的数学方程去描述器件和电路的端特 性,如电荷、...
Keywords:MOFETs;devicephysics;compactmodeling;surfacepotential;charge-sheetmodel !引言 简洁的MOSFET集约模型将电路设计和工艺制造过程紧 密地联系起来,在以CMOS为基础的IC产业发展中扮演着重 要角色研究器件集约模型的目标在于发展一组自恰、连续和 精确的基于器件物理的数学方程去描述器件和电路的端特 性,如电荷、...
A time-dependent and multi-dimensional numerical modeling for semiconductor device operation is proposed, in which the quasi-Fermi potentials for electrons and holes rather than the carrier densities are directly analyzed. Fundamental equations for the quasi-Fermi potential are reduced to a diffusion ...
the shortcomings of the traditional SiC MOSFET model are analyzed and improved based on the operation principles of the device. The mode of current diffusion is an important factor affecting the static characteristics of the SiC MOSFET. The current diffusion in the N- region are trapezoid due to...