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We deal successively with the following subjects: formation of an inversion layer, the ideal drain current, threshold voltage, carrier mobility in an inversion layer, the saturation mode, dynamic operation and inherent parasitics. Unless stated otherwise, the device structure considered here is that ...
todevicephysicsinconsistencybetweenthechannelcurrentexpressionandchan-nelchargee uation,thusresultinsomechannelcurrenterrors.Thesebenchmarktestresultsdemonstratedthatthechargesheetmod-elsre uiresomefundamentalimprovementstomaintaintheinherentdevicephysicsandhighaccuracyofthePao- ahmodel.Keywords:MO FETs;devicephysics;...
A time-dependent and multi-dimensional numerical modeling for semiconductor device operation is proposed, in which the quasi-Fermi potentials for electrons and holes rather than the carrier densities are directly analyzed. Fundamental equations for the quasi-Fermi potential are reduced to a diffusion ...
1第五章重要术语解释沟道长度调制:当MOSFET进入饱和区时有效沟道长度随漏-源电压的变化热电子:由于在高场强中被加速,能量远大于热平衡时的值的电子。轻参杂漏(LDD):为了减小电压击穿效应,在紧邻沟道处制造一轻掺杂漏区的MOSFET。窄沟道效应:沟道宽度变窄后阈值电压的偏移源漏穿通:由于漏-源电压引起的源极和衬底之...
instability due to ion drift. This also increases the PSG polarization term but is somewhat compensated for by the increase in the thin oxide thickness to 700 A. Overall, however, the contamination level of ions which are prevented from interfering with the operation of the device is increased....