Presents a study which explored the device physics of nanoscale metal oxide semiconductor field-effect transistors (MOSFET) by numerical simulations of a model transistor. Injection velocity limits at the source end of the channel; Role of scattering and the generalized Bethe condition for a MOSFET;...
Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the ...