(redirected fromDual Gate Oxide) AcronymDefinition DGODurango(Estado/Ciudad De México) DGODirection et Gestion des Organisations(French: Management and Organization Management) DGODirector General's Office(various organizations) DGODocument Général d'Orientation(French: General Guidance Document) ...
The dual gate oxide OTP cell may be used in an array in which only one OTP cell is programmed at a time. The dual gate oxide OTP cell also may be used in an array in which several OTP cells are programmed simultaneously.doi:US20070076463 A1Ali Keshavarzi...
The dual gate oxide OTP cell may be used in an array in which only one OTP cell is programmed at a time. The dual gate oxide OTP cell also may be used in an array in which several OTP cells are programmed simultaneously. 展开
(STI) regions and said plurality of device regions each having opposing edges abutting its corresponding STI region; selected ones of said devices regions having a preselected first device width such that an oxide layer formed thereon includes substantially thicker perimeter regions, along said ...
A semiconductor device (10) having two different gate dielectric thicknesses is formed using a single high-k dielectric layer, preferably a metal oxide. A thicker first gate dielectric (16) is formed in a region of the device for higher voltage requirements, e.g. an I/O region (24). A...
Gate electrode arrays (8 nm Cr/60 nm Au) were patterned by photolithography and thermal evaporation on the silicon wafer with a 300 nm silicon oxide layer. Then, Al was deposited on top of Au/Cr electrodes to be connected. After that, the surface of Al was oxidized to Al2O3unde...
forming a field oxide region to isolate an active area on a main surface of a semiconductor substrate; forming a first gate dielectric layer on the active area; implanting impurities into the substrate through the first gate dielectric layer; ...
In this paper, a near investigation of the design of the TG MOSFET tri-gate metal oxide semiconductor field effect transistor device utilizes the SILVACO T... R Kiran,IU Khan,Y Siddiqui 被引量: 0发表: 2022年 HYBRID INTEGRATED SEMICONDUCTOR TRI-GATE AND SPLIT DUAL-GATE FINFET DEVICES An int...
Dual-gate-material-based device design for unipolar metal oxide semiconductor-like carbon nanotube field effect transistors一种基于双栅材料的单极性类金属氧... 由于导电沟道-源/漏电极界面处可能发生的载流子带间隧穿,传统类金属氧化物半导体(MOS)碳纳米管场效应管呈现双极性传输特性,极大影响了器件性能的提高及...
Dual poly deposition and through gate oxide implantsDopants are implanted at relatively high energies into an unmasked first region of a semiconductor substrate (200) through a thin layer of gate electrode material (202) and a gate dielectric layer. Lower energy dopants are then implanted into the...