A method of simultaneously forming differential gate oxide for both high and low voltage transistors using a two-step wet oxidation process is described. A semiconductor substrate is provided wherein active areas of the substrate are isolated from other active areas and wherein there is at least ...
Low-voltage flexible dual-gate indium-tin-oxide-based thin-film transistors (TFTs) are self-assembled on SiO2-covered paper substrates by one shadow mask diffraction method. Solution-processed chitosan gate dielectric films have a large gate specific capacitance (5.8 mu F/cm(2)) due to the ele...
PURPOSE: A method for forming a dual gate oxide layer is provided to be capable of preventing the thinning of the gate oxide layer at a top corner of a field oxide layer. CONSTITUTION: A silicon oxide layer is formed on a silicon substrate(21) with a field oxide layer(22) by first ox...
[0010] The present invention is directed to a fabrication technique in which dual gate oxide thicknesses are provided but with less steps and one less mask than is currently required. Beginning with a substrate on which a local oxidation of silicon process has been performed, i.e., a substra...
forming a field oxide region to isolate an active area on a main surface of a semiconductor substrate; forming a first gate dielectric layer on the active area; implanting impurities into the substrate through the first gate dielectric layer; ...
FIG. 2A is a top view of a layout of the dual gate oxide trench MOSFET of the first embodiment of the present invention. FIG. 2B-1 is another top view of the layout of a dual gate oxide trench MOSFET200shown in FIG. 2A. FIG. 2B-2 is a cross-sectional view of the dual gate ox...
专利名称：Dual gate oxide high-voltage semiconductor device and method for forming the same 发明人：Theodore J. Letavic,Mark R. Simpson 申请号：US11003991 申请日：20041203 公开号：US07268046B2 公开日：20070911 专利内容由知识产权出版社提供 专利附图：摘要：A dual gate oxide high-voltage ...
A new dual-metal-gate technology that includes a metal-inserted full silicide stack (MIFS) is proposed for scaled high-kappa complementary metal-oxide-semiconcluctor (CMOS) processes. A single Ni-rich full silicide (FUSI) layer is used for both types of MOS field-effect transistors (MOSFETs)...
Twitter Google Share on Facebook DGO (redirected fromDual Gate Oxide) AcronymDefinition DGODurango(Estado/Ciudad De México) DGODirection et Gestion des Organisations(French: Management and Organization Management) DGODirector General's Office(various organizations) ...
A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's The conduction mechanism of the quasibreakdown (QB) mode for thin gate oxide has been studied in a dual-gate CMOSFET with a 3.7 nm thick gate oxide. System... H Guan,MF Li,Y He,... - 《IEEE...