(8 nm Cr/60 nm Au) were patterned by photolithography and thermal evaporation. The devices with carboxylic acid-terminated nanogapped graphene point contacts were fabricated by a dash-line lithography method which has been reported previously31. Individual diarylethene molecules were connected to ...
lithography and etching the hard mask; removing the photoresist, etching the polysilicon film/metal gate/high K dielectric in sequence to form a metal gate stacked structure; forming sidewalls and source/drain implantation; rapid thermal annealing, realizing to adjust the metal gate effect work ...
The material stack 24 is then patterned by lithography and etching so as to provide a patterned gate region or stack 32 within each of the device regions. Although a single patterned gate region (or stack) 32 is shown in each of the device regions, the present invention contemplates forming...
A memory merged logic (MML) semiconductor device of NMOS and PMOS dual gate structure including embedded memory of a self-aligned structure and a method of manufacturing the same, wherein in the MML semiconductor device, the memory area including n-type metal oxide semiconductor (NMOS) and p-...
labeled as32in FIG. 4(b), is formed utilizing standard lithography including, patterning the structure and etching the expose, i.e. unpatterned area, of protective layer30. The contact hole is needed in the present invention to provide an electrical contact between the top and bottom gate ...
For the dual nitride concept the within-die nitride thickness range is reduced significantly by optimizing the thickness of the trench filling oxide and in this way also the height difference between the active area protecting nitride layer. and the second nitride layer. on the oxide in the ...
but it is still advantageous for lithography. Again, it may either be deposited by CVD or spun on. If it is spun on, it will form a substantially flat and thin layer over the top of the upper oxide layer20but also substantially fill the extended via hole104with perhaps a dimple114at ...
The method comprises the following steps of coating a photoresist on a substrate which is deposited with an oxide layer thin film; removing one part of photoresist to expose a first area of the oxide layer thin film to be etched; coating an RELACS (resolution enhancement lithography assisted by...
An energy-efficient RAM cell based on novel majority gate in QCA technology The limitations of the Complementary Metal–Oxide–Semiconductor (CMOS) technology such as the dissipated power, hard lithography, and short channel effect... AH Majeed,E Alkaldy,S Albermany - 《Sn Applied Sciences》 被...
lithography and etching the hard mask; removing the photoresist, etching the polysilicon film/metal gate/high K dielectric in sequence to form a metal gate stacked structure; forming sidewalls and source/drain implantation; rapid thermal annealing, realizing to adjust the metal gate effect work ...