0 有用 醋溜白菜 2024-03-08 15:36:17 上海 适合初学者,日文全书标题有初学者字样,翻译英文就去掉了,内容有些匮乏 我要写书评 Dry Etching Technology for Semiconductors的书评 ··· ( 全部0 条 ) 论坛 ··· 在这本书的论坛里发言 + 加入购书单 ...
This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits. 聽The author describes the device manufacturing flow, and explains in which part ...
This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further m... J Palmer,B Boardman 被引量: 27发表: 1998年 REDUCTION OF CLC MATERIALS MN AND CU OXIDES FROM FIRST PRINCIPLES CALCULATIONS Chemical loopi...
当当中国进口图书旗舰店在线销售正版《【预订】Dry Etching Technology for Semiconductors 9783319356242》。最新《【预订】Dry Etching Technology for Semiconductors 9783319356242》简介、书评、试读、价格、图片等相关信息,尽在DangDang.com,网购《【预订】Dry Etch
1. A dry etching method for AlxGa1-xN(0≤x≤1) semiconductors comprising the steps of: introducing an etching gas into a reaction chamber (20) under vacuum; applying high-frequency power to said gas for producing plasma thereof; and etching said AlxGa1-xN(0≤x≤1) semiconductor with sai...
当当中国进口图书旗舰店在线销售正版《【预订】Dry Etching Technology for Semiconductors 9783319102948》。最新《【预订】Dry Etching Technology for Semiconductors 9783319102948》简介、书评、试读、价格、图片等相关信息,尽在DangDang.com,网购《【预订】Dry Etch
The technology achievement marks an inflection point for AMEC --China's largest provider of capital equipment for global manufacturers of semiconductors and LEDs. With operations and R&D centered inShanghai, and global sales and marketing inSingapore, the company is led by a team of semiconductor ...
- 《Plasma Sources Science & Technology》 被引量: 43发表: 1997年 Comparison of Dry Etching Techniques for III￢ Semiconductors in CH 4 /H 2 /Ar Plasmas Dry etching of III￢ semiconductors under reactive ion etching, magnetron, or electron cyclotron resonance (ECR) conditions has been performed...
In microwave dry etching, the substrate/resist etching selectivity is controlled by adding a material, such as an additional gas, to the reaction gas plasma that heats the substrate with greater energ
The chemical inertness and high bond strengths of the III-V nitrides lead to slower plasma etching rates than for more conventional III-V semiconductors under the same conditions. High ion density conditions (>3×1011cm3) such as those obtained in ECR or magnetron reactors produce etch rates up...