利用0.15μm标准CMOS工艺制造出了工作电压为30V的双扩散漏端MOS晶体管(double diffused drain MOS, DDDMOS).观察到DDDMOS的衬底电流-栅压曲线(Ib-Vg曲线)有两个峰.通过实验和TCAD模拟揭示了DDDMOS衬底电流的形成机理,发现衬底电流第一个峰的成因与传统MOS器件相同;第二个峰来自于发生在漂移区远离沟道一侧高场区的...
The invention discloses a double diffused drain metal oxide semiconductor (DDDMOS) device. The device comprises a channel region, a drift region, a source region, a drain region and a polysilicon gate, wherein the polysilicon gate is isolated from the channel region and the drift region by a...
Mechanism and impact of the double-hump substrate current in high-voltage double diffused drain MOS transistors高压双扩散漏端MOS晶体管双峰衬底电流的形成机... 利用0.15μm标准CMOS工艺制造出了工作电压为30V的双扩散漏端MOS晶体管(double diffused drain MOS, DDDMOS).观察到DDDMOS的衬底电流-栅压曲线(Ib-...
The photodetector is implemented with a pinned photodiode structure, and the photo-charge modulation is done by lateral electric field control using MOS gates [24]. The photodiode uses three-step n-type doping (n1, n2, n3) for building a lateral drift electric field to allow photo-electrons...
N-channel double diffusion MOS transistor with p-type buried layer underneath n-type drift and drain layers, and semiconductor composite device 来自 百度文库 喜欢 0 阅读量: 16 申请(专利)号: US201414158707 申请日期: 2014-01-17 公开/公告号: US9190513B2 公开/公告日期: 2015-11-17 ...
A drain region is formed in the active silicon layer. An LDD drift region is formed in the active sil... PM Shea,SJ Anderson,DN Okada 被引量: 2发表: 2009年 Method of fabricating a semiconductor device having a lateral double diffused MOSFET transistor with a lightly doped source and CMOS...
6,222,233, entitled “Lateral RF MOS Device with Improved Drain Structure,” discusses a lateral DMOS with an enhanced drift region. Referring to FIG. 2, there is an enhanced drift region (under region 416) which just touches the DMOS body (422) of the LDMOS device. This device concept ...
implanting a body of the first conductivity type on said face of said thin implanted layer adjacent said drift region, wherein said body extends through said thin implanted layer and into said substrate; implanting a source region and a drain region of said second conductivity type at said face...
A drain region (60) is formed at the face to be of the second conductivity type and to adjoin the drift region (26), and to be spaced from the IGFET body. A conductive gate (52) extends over the face between the source region (34) and the thick insulator region (42), with a ...
1.A laterally diffused metal oxide semiconductor (LDMOS) transistor, comprising:a source region disposed in a semiconductor substrate;a drain region disposed in the semiconductor substrate;a channel region disposed in the semiconductor substrate between the source region and the drain region;a drift reg...