2. Low voltage MOS; super junction MOS 3. SIC diode; SIC MOSFET Meirui's product line will help you achieve highly innovative and outstanding performance solutions, covering switched mode power supplies (SMPS), computing, motor control and drive, consumer electronics, mobi...
SPICE Device Model Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to...
175°C package of OptiMOS™ 5 Power MOSFETs in SuperSO8: Advantages? *Higher reliability: the 175°C TJ_MAX offers a longer lifetime at the same operating junction temperature*Higher temperature operation: the 175°C TJ_MAX offers more power at a higher operating junction tempe...
175°C package of OptiMOS™ 5 Power MOSFETs in SuperSO8: Advantages? *Higher reliability: the 175°C TJ_MAX offers a longer lifetime at the same operating junction temperature*Higher temperature operation: the 175°C TJ_MAX offers more power at a higher operating junction temperature*Highest...
A drain well of the extended drain MOS transistor has the first conductivity type. The drain well is separated from the lower layer by a drain isolation well having a second, opposite, conductivity type. A source region of the extended drain MOS transistor is separated from the lower layer ...
+85°C -55°C to +125°C General Description The TC4404/TC4405 are CMOS buffer-drivers constructed with complementary MOS outputs, where the drains of the totem-pole output have been left separated so that individual connections can be made to the pull-up and pull-down sections of the ...
Two PCRAM cells which use a common anode between them are disclosed. The two memory cells can be accessed separately to store two bits of data which can be read and written, and can be stacked one over the other with a common anode between them to form an upper and lower cell pair. ...
By minimizing the thermal rise above the board temperature, PowerPAK simplifies thermal design considerations, allows the device to run cooler, keeps rDS(ON) low, and permits the device to handle more current than a same- or larger-size MOS- FET die in the standard TSSOP-8 or SO-8 ...
7 FSB Output Fault Status This open-drain output pin (external pull-up resistor to VDD required) is set when the (Active Low) device enters Fault mode (see Fault mode) 8 CLOCK Input PWM Clock The clock input gives the time-base when the device is operated in external clock/ internal ...
26.The imager of claim 25, wherein in each pixel, said in-pixel shutter circuit comprises:a shutter control transistor; andsaid pinned diode charge storage element,wherein said shutter control transistor includes one source/drain coupled to said light sensitive element and another source/drain coup...