The invention relates to an MOS (Metal Oxide Semiconductor) field control thyristor, belonging to the technical field of power semiconductors. A P-type body area of a normal MCT (MOS Control Thyristor) extends downwards, an extending area is inserted into an N-type drift region so as to ...
The on-resistance of p-channel RESURF (reduced surface field) LDMOS (lateral double-diffused MOS) transistors has been improved by using a new tapered TEOS field oxide in the drift region of the devices. With similar breakdown voltage, at V/sub gs/=-5.0 V, the specific on-resistance of ...
Some of the electrons generated and accelerated in the drain depletion region become energetic enough to reach the oxide, to penetrate it, and to drift in the field existing there to the floating gate, where they become trapped. The gate becomes negatively charged and causes the surface ...
FIG. 1 (Prior Art) shows the cross section of a conventional insulated gate bipolar transistor (IGBT). The IGBT is a semiconductor power device that combines the metal oxide-semiconductor (MOS) gate control and bipolar current flow mechanism. The functional features of both a metal-oxide-semicon...
Experimental and theoretical aspects of electric-field-assisted positron kinetics in metal-oxide-silicon systems We use positron annihilation spectroscopy to study positron kinetics in electrically biased metal-oxide-silicon (MOS) system and trapping at the SiO/Si int... MP Petkov,KG Lynn,A Van Veen...
A novel SiC double-trench metal-oxide-semiconductor field effect transistor(MOSFET) with integrated MOS-channel diode is proposed and investigated by Senta... 魏杰,姜钦峰,罗小蓉,... - 《中国物理b:英文版》 被引量: 0发表: 2023年 A Novel 4H-SiC Double Trench MOSFET with Built-In MOS Channel...
Charge build-up and oxide wear-out during Fowler-Nordheim electron injection in irradiated MOS structures The degradation phenomena and charge build-up during high-field Fowler-Nordheim stress in silicon dioxide layers of MOS structures, pre-degraded by ionizin... T Bro?Ek,A Jakubowski - 《Micro...
R. et al. Silicon Nanowires with High-k Hafnium Oxide Dielectrics for Sensitive Detection of Small Nucleic Acid Oligomers. ACS Nano 6, 6150–6164 (2012). 8. Zhang, A. et al. Spearhead Nanometric Field-Effect Transistor Sensors for Single-Cell Analysis. ACS Nano 10, 3214–3221 (2016). ...
To ensure a uniform illumination, a lens (f = 600 nm) was inserted into the optical path to expand the laser spot to 60.7 μm2, reducing the signal fluctuations introduced by the defocus of the laser spot and the drift of the sample. To achieve the optimal spectral match ...
Das, A.et al. Highly sensitive palladium oxide thin film extended gate FETs as pH sensor.Sensors and Actuators B: Chemical205, 199–205 (2014). ArticleCASGoogle Scholar Spijkman, M.et al. Beyond the Nernst-limit with dual-gate ZnO ion-sensitive field-effect transistors.Applied Physics Letter...