网络场氧化层;场区氧化层;场氧化物 网络释义 1. 场氧化层 微电子学英语_百度百科 ... Field effect transistor 场效应晶体管Field oxide场氧化层Filled band 满带 ... baike.baidu.com|基于75个网页 2. 场区氧化层 ...sivation)与隔離(Isolation):场区氧化层(Field oxide)及矽的局部氧化层 (LOCOS) ...
网络释义 1. 场氧化绝缘层 电器电子词... ... field oxide implantation 场氧化层离子注入field oxide isolator场氧化绝缘层field oxide region 场氧化区 ... www.zftrans.com|基于22个网页
limit of metal–oxide–semiconductor field-effect transistor (MOSFET) at room temperature. technologeeko.com 该新型器件,如陡坡晶体管,从该项目得名,发展可以提供一个更加突然之间的过渡和关闭状态时 的 金 属 氧 化 物半 导 体 场 电流 限制 比较60mV/decade效应晶体管(MOSFET)在室温下。 technologeeko...
Gate oxide和field oxide通常都是使用thermal oxidation方法生长,因为有两个好的性质 1)可以提供high-quality oxides; 2) 有最低的interface trap densities. 有多种氧化的方法,包含1)thermal oxidation, electrochemical anodization, 和plasma-enhanced chemical vapor deposition. 其中thermal oxidation在现代IC技术中最...
1) field-oxide gate 场氧栅2) oxide field 栅氧电场 1. By threshold voltage drift the NBTI degradation was characterized,and based on the research of stress time,oxide field,and temperature stress dependence of . 用阈值电压漂移量表征了NBTI效应的退化,深入讨论了影响NBTI效应的主要因素:应力作用...
The effectiveness of submicron modified-LOCOS isolations as functions of field oxide volume ratio and field oxide interface state density has been studied using 2-D device simulation. Both the field threshold voltage and subthreshold gate swing of the parasitic field transistor increase as the field ...
PROBLEM TO BE SOLVED: To prevent a field oxide film in a central field area from less growing and furthermore to prevent the reliability of gate oxide film from decreasing owing to concentration of an electrical field at a boundary where the field oxide film and the gate oxide film contacts...
A field oxide device (FOD) useful for electrostatic discharge (ESD) protection and other applications. The FOD is characterized as being capable of achieving a relatively low breakdown voltage and capable of handling relatively high currents during an ESD event. In general, the FOD includes a zene...
摘要: Proposes a well-coupled field-oxide device (WCFOD) to effectively improve Electrostatic Discharge (ESD) robustness of the output pad in a 0.5 micrometer complementary metal oxide semiconductor (CMOS) process. WCFOD for output ESD protection; Experimental results; Conclusion....
The method is for the formation of field oxidefilm (10) using poly buffered local oxidation method which can eliminate the voids of polysilicon and defects of oxide film for gate. The methods comprises the steps of; (A) growing the pad oxide film (2) on a silicon substrate (1), and ev...