A field oxide device (FOD) useful for electrostatic discharge (ESD) protection and other applications. The FOD is characterized as being capable of achieving a relatively low breakdown voltage and capable of handling relatively high currents during an ESD event. In general, the FOD includes a zene...
摘要: Proposes a well-coupled field-oxide device (WCFOD) to effectively improve Electrostatic Discharge (ESD) robustness of the output pad in a 0.5 micrometer complementary metal oxide semiconductor (CMOS) process. WCFOD for output ESD protection; Experimental results; Conclusion....
网络氧化层 网络释义 1. 氧化层 至于MOS 组件或厚氧化层(Field-oxide) 组件的ESD 承受能力,跟该组件的第二次崩溃点电流(It2, secondary-breakdown curren… www.docin.com|基于11个网页 例句
It has been observed that many CMOS device types exhibit milliampere range post-rad n-channel leakage for doses between 104 - 105 rad (Si) even though the gate oxide threshold shift is much less than that required for inversion in the channel region. This is caused by field oxide inversion...
For Hf-rich layers, the crystallization occurs during cycling, as confirmed by transmission electron microscopy (TEM) analysis of a cycled device (see Fig. 3). As mentioned previously, these layers behave ferroelectric due to the presence of a displacement current peak. This can be observed in ...
Metal-oxide semiconductor field effect transistor device fabrication process 来自 百度文库 喜欢 0 阅读量: 14 申请(专利)号: US19980056231 申请日期: 1998-04-07 公开/公告号: US6008100A 公开/公告日期: 1999-12-28 申请(专利权)人: UNITED MICROELECTRONICS CORP.发明人:...
A metal-oxide-semiconductor field-effect nanostructure (MOSFENS) device, which is closely related to a MOS transistor but with a nanostructured oxide-semiconductor interface, can define the spin lattices potential at the interface and alter the occupation i with the gate electrode potential to change...
Semiconductor thin film decomposing method, decomposed semiconductor thin film, decomposed semiconductor thin film evaluation method, thin film transistor made of decomposed semiconductor thin film, and image display device having circui... A surface roughness of a polycrystalline semiconductor film to be ...
关键词: Ga2O3 field plate high-k Schottky diode edge termination power device HVPE DOI: 10.1109/LED.2021.3089945 年份: 2021 收藏 引用 批量引用 报错 分享 全部来源 免费下载 求助全文 国家科技图书文献中心 (权威机构) IEEEXplore IEEEXplore (全网免费下载) Semantic Scholar ResearchGate ...
Here we report top-gate complementary carbon nanotube MOSFETs in which localized conformal solid-state extension doping is used to set the device polarity and achieve performance matching. The channel of the transistors remains undoped, providing complementary metal–oxide–semiconductor-compatible n- and...