A field oxide device (FOD) useful for electrostatic discharge (ESD) protection and other applications. The FOD is characterized as being capable of achieving a relatively low breakdown voltage and capable of handling relatively high currents during an ESD event. In general, the FOD includes a ...
A field oxide device (FOD) useful for electrostatic discharge (ESD) protection and other applications. The FOD is characterized as being capable of achieving a relatively low breakdown voltage and capable of handling relatively high currents during an ESD event. In general, the FOD includes a zene...
摘要: Proposes a well-coupled field-oxide device (WCFOD) to effectively improve Electrostatic Discharge (ESD) robustness of the output pad in a 0.5 micrometer complementary metal oxide semiconductor (CMOS) process. WCFOD for output ESD protection; Experimental results; Conclusion....
网络释义 1. 场氧化层 微电子学英语_百度百科 ... Field effect transistor 场效应晶体管Field oxide场氧化层Filled band 满带 ... baike.baidu.com|基于75个网页 2. 场区氧化层 ...sivation)与隔離(Isolation):场区氧化层(Field oxide)及矽的局部氧化层 (LOCOS) – 表面保护(Surface passivation):屏蔽...
It has been observed that many CMOS device types exhibit milliampere range post-rad n-channel leakage for doses between 104 - 105 rad (Si) even though the gate oxide threshold shift is much less than that required for inversion in the channel region. This is caused by field oxide inversion...
Method of judging whether boron penetrates through P-type metal-oxide-semiconductor field-effect transistor (PMOSFET) device The invention discloses a method of judging whether baron penetrates through a P-type metal-oxide-semiconductor field-effect transistor (PMOSFET) device. T... 罗啸,石晶,钱文...
With the discovery of ferroelectric hafnium oxide1 its application in many novel device concepts like non-volatile ferroelectric FETs2, ferroelectric tunnel junctions3, as well as pyro- and piezoelectric sensors4,5,6 has been explored. This is a direct consequence of hafnium oxides full ...
In this letter, we report for the first time the use of a sheet of cellulose-fiber-based paper as the dielectric layer used in oxide-based semiconductor th... E Fortunato,N Correia,P Barquinha,... - 《IEEE Electron Device Letters》 被引量: 231发表: 2008年 High Performance n-Channel Or...
Magnetization switching in magnetic tunnel junctions using spin-transfer torque and spin–orbit torque is key to the development of future spintronic memories. However, both switching mechanisms suffer from intrinsic limitations. In particular, the switc
The field effect mobility in an oxide thin film transistor (TFT) is studied theoretically. Based on a multiple-trapping and release model, a unified expression for field effect mobility is formulated for oxide TFTs. This model can well explain the temperature and gate voltage dependent mobility ...