Double Diffused Drain Metal-Oxide-Semiconductor Devices with Floating Poly Thereon and Methods of Manufacturing The SameA metal-oxide-semiconductor (MOS) device is disclosed. The MOS device includes a substrate of a first impurity type, a diffused region of a second impurity type in the substrate,...
TAKE A LOOK :SHORT CHANNEL MOS STRUCTURES The figure below shows a double-diffused MOS (DMOS) structure. The channel length, L, is controlled by the junction depth produced by the n+and p-type diffusions underneath the gate oxide. L is also the lateral distance between the n+p junction ...
An As-P(n+-n-) double diffused drain is characterized as one of the most feasible device structures for VLSI's from the overall viewpoint of device design. This device makes good use of both As, suitable for microfabrication, and P, in realizing a graded junction. The feasibility of this...
Semiconductor Device and Manufacturing Method Thereof 发明人：Tsung-Yi Huang,Chien-Hao Huang 申请号：US13555163 申请日：20120722 公开号：US20140021544A1 公开日：20140123 专利内容由知识产权出版社提供 专利附图：摘要：The present invention discloses a double diffused drain metal oxide semiconductor (DDDMOS...
Mechanism and impact of the double-hump substrate current in high-voltage double diffused drain MOS transistors高压双扩散漏端MOS晶体管双峰衬底电流的形成机... 利用0.15μm标准CMOS工艺制造出了工作电压为30V的双扩散漏端MOS晶体管(double diffused drain MOS, DDDMOS).观察到DDDMOS的衬底电流-栅压曲线(Ib-...
The effective channel lengths extracted by this method agree with the distance between the source and the drain fairly well关键词: Effective channel length Double-diffused MOSFET Parameter extraction 会议名称: International Conference on Microelectronic Test Structures ...
The part of magnetic-field sensor has a magnetic-field sensitive device with complement triple-drain MOS transistor. 它的磁敏感部分由2个互补的三漏MOS晶体管组成,将恒流源、放大器、施密特触发器和输出驱动管等电路集成在同一块芯片上。5) double-diffused transistor 双扩散晶体管6...
4) double-diffused MOS transistor 双扩散MOS晶体管 5) LDMOS 横向双扩散MOS 6) diffusion self-aligned technology 扩散自对准工艺 补充资料:自对准技术 微电子技术中利用元件、器件结构特点实现光复印自动对准的技术。早期的 MOS集成电路采用的是铝栅工艺,首先在硅单晶片上热氧化生长一层二氧化硅膜,经第一次光刻,...
Through these procedures, the current running from a source electrode 11 to a drain diffused layer 5 and a drain electrode 12 through a source diffused layer 3 in the switch-on state runs into the high concentration part with low resistance of the offset gate layer 7 to diminish the on-...
SOI layer, UBO, and polysilicon under different the back-gate biases for a CBL SOI REduced SURface Field (RESURF) Lateral Double-diffused MOS (LDMOS)... X Luo,D Fu,L Lei,... - 《IEEE Transactions on Electron Devices》 被引量: 9发表: 2009年 Back-contacted back-junction silicon solar...