This study presents a nondestructive and in-depth defect characterization method, based on the principle of polarized light microscopy (PLM), which can be used to quickly evaluate SiC substrates and epilayers. The developed PLM system has the capability to map, on a wafer scale, micropipes, ...
Attempts to grow mono-crystalline cubic silicon carbide (3C-SiC) have been made using vapor phase hetero-epitaxial growth with Si [1], TiC [2], and sapphire [3] as substrates, and with bulk growth using the sublimation method. In 1983, Nishino et al. reported hetero-epitaxial growth of ...
Enlargement of step-free SiC surfaces by homoepitaxial web growth of thin SiC cantilevers Lateral homoepitaxial growth of thin cantilevers emanating from mesa patterns that were reactive ion etched into on-axis commercial SiC substrates prior to... PG Neudeck,JA Powell,GM Beheim,... - 《Journal...
The solar cells made with the CuInSe2 absorber layers grown onto corning 7059 glass substrates and annealed at 350 °C shows efficiency of 6.6%, whereas the efficiency is 2% for the CIS annealed at 420 °C. The cell shows efficiency of 8.5% for the layers grown onto soda-lime float ...
Microstructural evolution and defect formation during the initial stages of the growth of silicon carbide and aluminum nitride on α(6H)-SiC(0001) substrates The effect of gas flow ratios (C2H4Si2H6 = 1,2,10) on the growth mode of SiC thin films on vicinal α(6H)-SiC(0001) substrates by...
This is presumably because the anticipated V donor level position is close to mid-gap and only possible to detect by very high-temperature DLTS measurements. However, for semi-insulating 4H–SiC substrates, an activation energy of ~1.6eV has often been found employing temperature-dependent ...
Interestingly, the density of OS(top)is much larger than OS(bottom)in t-CVD WS2, which could be due to the differences in growth substrate (sapphire rather than HOPG). Similar features have also been observed in other systems, such as WS2on graphitized-SiC substrates7,31(OS (bottom)> OS...
model such a system, we first adopt the MD simulation. The advantage of MD is that it includes almost all the nanoscale thermal transport physics, except for its classical nature10,11. Figure1billustrates the simulation cell of the system in MD simulations. The phonons gain energy from the ...
Our findings showed that some carrots had the basic components consistent with the model proposed by Benamara et al., but also contained additional features beyond the basic components. Eight carrots contained multiple bright line features, and 25 out of 50 bright line features exhibited multiple ...
The defectivity of a matrix is defined as the sum of the defectivities of its eigenvalues, where the latter is defined as the difference between the algebraic and geometric multiplicities of an eigenvalue. From: Introduction to Linear Control Systems, 2019 ...