Defects in silicon carbide (SiC) have emerged as a favorable platform for optically active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide enhanced spin-dependent readout and long-term charge stabili...
Defects in SiC for quantum computing The successful implementation of the nitrogen-vacancy (NV) center in diamond as a qubit has spawned a great deal of interest in this defect. In principle, ... JR Weber,WF Koehl,JB Varley,... - 《Journal of Applied Physics》 被引量: 24发表: 2011年...
Atomically thin two-dimensional (2D) materials are ideal host systems for quantum defects as they offer easier characterisation, manipulation and read-out of defect states as compared to bulk defects. Here we introduce the Quantum Point Defect (QPOD) dat
从表中可以看出, 未注入N+的ZnO:In薄膜(S0)载流子浓度高达4.53×1019 cm−3, 表现为很好的n型导电. 在大量N+注入到ZnO:In薄膜的过程中, 会产生很多缺陷, 同时带来很大程度的晶格损伤, 使得ZnO:(In, N)薄膜(S1)呈现较差的导电性. 为了进一步激活注入的N+, 部分ZnO:(In, N)样品在N2氛围下进行了不...
In addition the carrier removal was monitored during irradiation, and a carrier removal rate of 7.8×104cm1for 5.5 MeV alpha particles was measured. When compared with a similar study of alpha particle irradiation of InP, the results suggest that SiC has radiation resistance comparable to that ...
possible applications in nanoscale spin sensing, we compare their performance to that of typical spin-defect-based sensors relying on NV centers in diamond. This work broadens the applicability of{V}_{B}^{-}defects in hBN, opening up new opportunities for nanoscale quantum sensing and technology...
Our results indicate that in contrast to the prediction of the EMA, there exists no high-stress limit for the reduction of the central P-related hf splitting. The application of the approach onto donors in SiC confirms an incorporation of the P atoms onto both, the silicon as well as the...
Defects for quantum computing. a Nitrogen-vacancy center in diamond. b Divacancy in SiC. The position of vacancies is depicted by a small dots. The C3 symmetry axis of the C3v symmetry is also shown. The spin density is localized on the carbon dangling bonds (pink lobes) in both defects...
et al. Vanadium spin qubits as telecom quantum emitters in silicon carbide. Sci. Adv. 6, eaaz1192 (2020). CAS Google Scholar Gilardoni, C. M. et al. Spin-relaxation times exceeding seconds for color centers with strong spin–orbit coupling in SiC. New J. Phys. 22, 103051 (2020)....
Understanding the dynamics and the formation of spin defects hosted in diamond is therefore of extreme importance, having also a broader implication for other solid-state defect-host materials, such as SiC25 and rare-earth doped crystals26. Here we describe a method to tailor the formation ...