Son NT, Carlsson P, Gallstrom A, Magnusson B, Janzen E. Prominent defects in semi-insulating SiC substrates. Physica B 2007;401-402:67-72.Son N T,Carlsson P,Gallstrom A,et al.Prominent defects in semi-insulating SiC substrates. Physica B Condensed Matter . 2007...
These deep levels are suggested to be associated to different thermal activation energies and responsible for the semiinsulating behaviour in HPSI SiC substrates. Their role in carrier compensation is discussed. 展开 关键词: Semi-insulating (SI) Carrier Compensation Vacancy Electron Paramagnetic Resonance...
Electron paramagnetic resonance (EPR) spectroscopy and temperature-dependent Hall measurements are being used to determine the structure and energy level of defects responsible for conductivity in semi-insulating (SI) SiC. In principle, a perfectly compensated sample should have no detectable EPR signal ...
ESR characters of intrinsic defects in epitaxial semi-insulating 4H-SiC illuminated by Xe light[J]. 程萍,张玉明,张义门,郭辉.半导体学报. 2009(12)Cheng P,Zhang Y M. ESR Characters of Intrinsic Defects in Epitaxial Semi-insulating 4H-SiC Illuminated by Xe Light[J].Chinese Journal of ...
We initially observe a drastic increase in PL intensity of VV0, by about 50 times at 6 K, when continuously illuminating a semi-insulating 4H-SiC sample with a 405 nm (“UV”) laser diode, in addition to the 976 nm (1.27 eV) laser required for PL excitation. This is shown...
Intrinsic defects in high-purity SiC Intrinsic defects are of importance for different applications of SiC such as: the semi-insulating (SI) properties of SI substrates, the carrier lifetime o... E. Janzen,NT Son,B Magnusson,... - 《Microelectronic Engineering》 被引量: 53发表: 2006年 CL...
We have detected defects micro-pipes and a cluster of impurities in semi-insulating 6H-SiC substrates using long-wavelength infrared thermal imaging camera (IR-camera) with 8 ～ 14 urn in non-destructive and non-contact. Also we have evaluated the thermal influence of defects on the entire ...
Progresses in defects characterization of high-purity semi-insulating (HPSI) SiC substrates are reviewed. The vacancies, divacancy, and carbon vacancy-carbon antisite pairs were found to be dominating defects in HPSI 4H-SiC substrates with the thermal activation energy E_a in the range ～0.6-1.6...
Defects in high-purity semi-insulating (SI) SiC substrates including the carbon vacancy (VC), silicon vacancy (VSi), and (VCCSi) pair are studied. The annealing behavior of these defects and their role in carrier compensation in SI 4H–SiC are discussed....
Traps and Defects in AlGaN-GaN High Electron Mobility Transistors on Semi-Insulating SiC Substratesdoi:10.1557/PROC-1202-I09-02Yongkun SinErica DeIonnoBrendan ForanNathan Presser