tCCD_L通常是一个可变的值,取决于内存的频率,对于DDR5,通常为max(8nCK, 5ns)。 由于不同Bank Group之间的操作可以独立进行,tCCD_S通常较短,较短的tCCD_S,可以减少跨Bank Group操作的等待时间,提高内存带宽利用率。而tCCD_L通常较长,这可以避免同一个Bank Group内部的资源冲突,但会增加等待时间,影响带宽利用率...
Fine Offset for Minimum CAS to CAS Delay Time (tCCD_Lmin), same bank group.This Byte modifies the calculation of SPD Byte 40 with a fine correction using FTB units. The value of tCCD_Lmin comes from the SDRAM data sheet. This value is a two’s complement multiplier for FTB units, ...
(Identifier: DDR5_MEM_DEVICE_TCCD_L_WR2_CYC) tRRD_S Specifies the Activate-to-Activate command delay to different bank group for 1KB page size in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TRRD_S_CYC) tRRD_L Specifies the Activate...
tCCD_L_WR Specifies the write CAS_n to write CAS_n command delay for same bank group in nanoseconds. (Identifier: MEM_TCCD_L_WR_NS) tCCD_L_WR2 Specifies the write CAS_n to write CAS_n command delay for same bank group and the second write is not RMW, in nanosecond...
tCCD_L_WR Specifies the write CAS_n to write CAS_n command delay for same bank group in nanoseconds. (Identifier: MEM_TCCD_L_WR_NS) tCCD_L_WR2 Specifies the write CAS_n to write CAS_n command delay for same bank group and the second write is not RMW, in nanoseconds. ...
tCCD_L_WR Specifies the write CAS_n to write CAS_n command delay for same bank group in nanoseconds. (Identifier: MEM_TCCD_L_WR_NS) tCCD_L_WR2 Specifies the write CAS_n to write CAS_n command delay for same bank group and the second write is not RMW, in nanoseconds...