PURPOSE: To relate one redundant column of a pair of redundant array blocks to one of input/output terminals by substituting one column in array halves with this redundant column.MCCLURE DAVID CHARLESデイビッド シー. マククルーアIYENGAR NARASIMHAN...
Column redundancy architecture for a read/write memoryAn integrated circuit memory is disclosed which has its primary memory array arranged into blocks and which has redundant columns, each of which can replace a column in any one of the blocks. The redundant columns are selected by way of a ...
A system for adding redundancy to the data path of a content addressable memory array is disclosed herein. The disclosed system employs an array of memory elements, supplemented by an array of redundant memory elements, with a switching system and a redundancy control system to ensure that defecti...
DRAM with column slices improves circuit redundancy. Slices have global column length, and memory is divided in groups with size of redundancy columns having slices. Failure detected among slices of corresponding storage is replaced by corresponding redundancy column slice, such that column redundancy di...
Flexible and area efficient column redundancy for non-volatile memories A non-volatile memory wherein bad columns in the array of memory cells can be removed is described. Additionally, substitute redundant columns can replace the removed columns. Both of these processes are performed on the memory...
Semiconductor memory device with redundancy circuits In a memory device, if there is a defective column among the memory cell columns in the memory cell array, all of the bit lines sharing the same I/O data lines as such a defective column are separated from the I/O data line regardless ...
COLUMN REDUNDANCY CIRCUIT FOR DYNAMIC RANDOM ACCESS MEMORY IN CMOS TECHNOLOGY MEMORY WITH DYNAMIC RANDOM ACCESS TO SUBSTITUTE FOR A NORMAL COLUMN LINE 70 COUPLED WITH DEFECTIVE NORMAL MEMORY CELLS A SPARE COLUMN LINE 60 COUPLED WITH ... S Seung-Mo,SM Seo 被引量: 0发表: 1988年 Dynamic random...
Column redundancy logic, response to a column address corresponding to a defective physical column of the storage matrix, stores a data bit in a column of the redundant storage matrix (31). Redundancy control logic (25, 30, 32, 33, 34) response to the column redundancy logic operates on ...
M Goudarzi and T Ishihara, "SRAM Leakage Reduction by Row/Column Redundancy Under Random Within-Die Delay Variation," IEEE Transactions on Very Large ... Goudarzi,Ishihara - IEEE 被引量: 12发表: 2008年 Redundancy Techniques for SRAM Leakage Reduction in Presence of Within-Die Delay Variation SR...
Each memory cell array segment 109 includes a fuse circuit 105 which enables a respective first redundancy enable signal 51 when the column address is a redundancy address and enables a second redundancy enable signal 52, 53, 54, 55 for the memory cell array segment in which the redundancy occ...