Redundancy Techniques for SRAM Leakage Reduction in Presence of Within-Die Delay Variation Ishihara."SRAM Leakage Reduction by Row/Column Redundancy Under Random Within-Die Delay Variation,". Very Large Scale Integration (VLSI) Systems, IEEE Transactions on . 2010M. Goudarzi, T. Ishihara, "SRAM ...
A method of assigning bits to redundant regions for variable bit redundancy region boundaries in a compliable memory such as a 1-port SRAM is provided. Methods include allocating bits between the redundant regions in nearly equal proportions while minimizing the amount of chip real estate consumed ...
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Redundancy techniques for SRAM leakage reduction in presence of within-die delay variation M Goudarzi and T Ishihara, "SRAM Leakage Reduction by Row/Column Redundancy Under Random Within-Die Delay Variation," IEEE Transactions on Very Large ... Goudarzi,Ishihara - IEEE 被引量: 12发表: 2008年 ...
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