Utilizing chemical dry etching for forming rounded corner in shallow trench isolation process The present invention is to utilize chemical dry etching technique to form a rounded corner in a shallow trench isolation process. After finishing the etching of the shallow trench, the present invention ...
专利名称:CHEMICAL DRY ETCHING DEVICE 发明人:SUEHIRO KEIICHI 申请号:JP447186 申请日:19860113 公开号:JPS62163744A 公开日:19870720 专利内容由知识产权出版社提供 摘要:PURPOSE:To disperse a radical and to obtain a homogeneous etched surface by fitting a metallic discoid baffle wherein the large-...
REACTIONS OF METAL SPECIES IN DRY ETCHING AND CHEMICAL VAPOR DEPOSITION Gas Phase Metal Reactions 1992, Pages 661-682 Purchase options CorporateFor R&D professionals working in corporate organizations. Academic and personalFor academic or personal use only. Looking for a customized option? Contact sales...
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Dielectric film etching in semiconductor device manufacturing: Development of SiO2 etching and the next generation plasma reactor The progress of the dry etching technology for dielectric materials and the ASET project were reviewed. Reactive ion etching (RIE) replaced a wet chemical ......
Evaluation of chemically amplified deep UV resis for micromachining using e-beam lithography and dry etching The electron-beam response of new chemically amplified positive multi-component ARCH-resist family (ARCH and ARCH2) and the suitability of pattern transfer... P Hudek,IW Rangelow,I Kostic,...
EVACUATION DEVICE FOR CHEMICAL DRY ETCHING
A dry etching device and an electrode thereof are disclosed in this application. The electrode of a dry etching device includes: an electrode plate, a surf... CB Wen 被引量: 0发表: 2020年 DRY ETCHING METHOD AND DEVICE THEREOF PROBLEM TO BE SOLVED: To improve a selection rate to resist ...
DRY ETCHING DEVICE AND ELECTRODE THEREOF A dry etching device and an electrode thereof are disclosed in this application. The electrode of a dry etching device includes: an electrode plate, a surf... CB Wen 被引量: 0发表: 2020年 DRY ETCHING DEVICE AND ELECTRODE THEREOF A dry etching device...
CONSTITUTION:A substrate 11 to be subjected to chemical dry etching is set in a vacuum vessel 1. A main valve 2a and an auxiliary valve 6 are closed, and a main valve 2b is opened to roughly evacuate the vessel 1 to a specified pressure by the preprocess evacuation line and to remove ...