Utilizing chemical dry etching for forming rounded corner in shallow trench isolation process The present invention is to utilize chemical dry etching technique to form a rounded corner in a shallow trench isolation process. After finishing the etching of the shallow trench, the present invention ...
专利名称：CHEMICAL DRY ETCHING DEVICE 发明人：SUEHIRO KEIICHI 申请号：JP447186 申请日：19860113 公开号：JPS62163744A 公开日：19870720 专利内容由知识产权出版社提供 摘要：PURPOSE:To disperse a radical and to obtain a homogeneous etched surface by fitting a metallic discoid baffle wherein the large-...
1. A method of radiation induced dry etching of a substrate having a layer of a first material superposed on a second material comprising: (a) mounting said substrate in a reaction chamber containing a reactive gas, whereby said first material and said reactive gas form a first solid reaction...
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A dry etching device and an electrode thereof are disclosed in this application. The electrode of a dry etching device includes: an electrode plate, a surf... CB Wen 被引量: 0发表: 2020年 DRY ETCHING METHOD AND DEVICE THEREOF PROBLEM TO BE SOLVED: To improve a selection rate to resist ...
A system and method for chemical dry etching system. The present invention provides a method for performing an etching process for manufacture of integrated circuits. The method includes providing a semiconductor wafer. The method also includes the step of maintaining the semiconductor wafer in a pred...
DRY ETCHING DEVICE AND ELECTRODE THEREOF A dry etching device and an electrode thereof are disclosed in this application. The electrode of a dry etching device includes: an electrode plate, a surf... CB Wen 被引量: 0发表: 2020年 DRY ETCHING DEVICE AND ELECTRODE THEREOF A dry etching device...
CONSTITUTION:A substrate 11 to be subjected to chemical dry etching is set in a vacuum vessel 1. A main valve 2a and an auxiliary valve 6 are closed, and a main valve 2b is opened to roughly evacuate the vessel 1 to a specified pressure by the preprocess evacuation line and to remove ...
The present invention is to utilize chemical dry etching technique to form a rounded corner in a shallow trench isolation process. After finishing the etching of the shallow trench, the present invention utilizes an isotropic etching step, which is a chemical dry etching step of a high silicon ...
Device for chemical dry etching of integrated circuits Apparatus for dry chemical etching caused by ion bombardment of a substrate placed in a vacuum chamber. The substrate is in contact with an electrode, connected to a high frequency bias voltage source having one terminal connected to a g......