Dry etch常见profile类型、产生原理及相关改善方法 写在前面 Dry etch工艺过程中,我们所需传递的pattern多为line、trench、hole等。一般情况下,我们期望得到比较垂直的profile,但因为工艺过程中各种参数/因素(Recipe、Hardware、人等)的影响往往会得到各种奇奇怪怪的profile,下面将对Dry etch工艺过程中常见的几种profile类...
一、Bowing：弓形，sidewall弯曲。产生原理包括离子反射、阳离子撞击、O2过多等。改善方法包括调整gas ratio、降低O2含量、使用C4F8或C4F6为主蚀刻gas等。二、Taper：梯形，sidewall保护过度导致。改善方法包括增大BRF power、降低压力、提高工艺温度、改变gas ratio等。三、Notch：凹槽/旁刻，表现为layer交界...
1)对于OX的刻蚀,相对于其他刻蚀材料而言,一般C在plasma中占比相对越高,越容易获得对其他材料选择比的趋势;C/F高的gas产生的polymer容易在顶部积累,进而形成bowing profile,如下图K所示(详见之前所写文章:Dry etch常见profile类型、产生原理及相关改善方法); ...
Control of silicon tip profile is desirable in many applications. Although there are many parameters that have influence on the final tip profile, the study reported in this paper is concentrated on the effect of adding CHF 3, O 2 and Ar gases to the normal SF 6 reactive etching process. ...
TRAVIT is a dry etch simulation tool that has been developed to simulate etch profiles, linewidths, and microloading dependent variation of critical dimensions (CD) resulting from dry etch. The software accepts GDS patterns, materials, initial resist profile, and process parameters. A mathematical ...
etch profileCD variationsimulationPredicting variations of critical dimensions (CDs) during a dry etching process is highly desirable in order to reduce cost and shorten fabrication time. Microloading and macroloading effects contribute to CD variation. Variation of pattern density and plasma distribution...
A system and method is disclosed for providing a dry-wet-dry etch procedure to create a sidewall profile of a via in a semiconductor device. A first vertical anisotropic dry etch process is applied to etch through a first portion of a dielectric layer. An isotropic wet etch process is then...
(Invited) Towards a Vertical and Damage Free Post-Etch InGaAs Fin Profile: Dry Etch Processing, Sidewall Damage Assessment and Mitigation Optionsdoi:10.1149/06905.0015ecstUthayasankaran PeralaguXu LiOlesya IgnatovaYen-Chun FuDavid Alan John Millar...
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写在前面Dry etch工艺过程中,会遇到各种不同材质layer的刻蚀。有些需要尽可能减小对下层layer/stop layer的loss/damage, 即需要对下层layer有尽可能大的选择比;有… 阅读全文 Dry etch常见profile类型、产生原理及相关改善方法 Dry etch常见profile类型、产生原理及相关改善方法写在前面Dry etch工艺过程中,我们所需...