After annealing at 900°C in air for 10 h, RBS-C measurements show that the amorphous layer recrystallized epitaxially about 9.3 nm, and XRD results indicate the formation of YAl precipitates with 〈002〉 ja:math preferred orientation with respect to 〈0001〉 ja:math of the substrate. For ...
The microstructure of epitaxial δ-Bi 2O 3 thin films deposited by means of atmospheric pressure halide chemical vapour deposition on a c-sapphire substrate surface at 800 °C using BiI 3 and O 2 as starting materials has been investigated by X-ray diffraction (XRD) and transmission electron ...
For all x , the thin films crystallized predominantly in the κ -modification as demonstrated by XRD 2 θ - ω scans. However, for x > 0.28, phase separation of the cubic bixbyite and the κ -phase occurred. The κ -Ga 2 O 3 template increased the crystalline quality of the κ -(...
The full width at half-maximum of (0002) in the XRD rocking-curve spectrum of GaSe epilayer is obtain around 207 arcsec, which is the smallest value observed to date. The epitaxial growth of GaSe demonstrated the feasibility of growing large-area epilayers. 展开 关键词: epilayers GaSe ...
Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. X-ray diffraction (XRD) 2θ-ω scans around (00·2) reflection for InxGa1−xN layers. Introduction to microfabrication, chapter 1 Figures from: Franssila: Introduction to Microfabrication unless indicated otherwise. ...
aXRD suggests that these samples are not perfectly ordered but rather are a mix of the pmm2 and LI2 phases. Some success has been had growing these pmm2 films on sapphire substrates under specific temperature ranges (300C–400C). Given the nature of the growth, this phase is not expected...
构成,用XRD 和室温透射光谱测试表征了这些薄 膜的结构和光学特性,结果如图4 所示。 可以看 到,随着衬底温度的降低,立方相Mg x Zn 1 - x O薄膜 中Zn 组分溶度限明显增大:从500 ℃时的0. 4 到 400 ℃时的0. 7,再到350 ℃时的0. 72 。 这一现象 表明较低的生长温度有助于抑制生长界面处的表 面...
GaN-based light emitting diodes (LEDs) were epitaxially grown on patterned sapphire substrates (PSSs) to investigate the effectiveness of PSSs for improving the internal quantum efficiency (IQE) and light extraction efficiency (LEE) of the LEDs. Using X-ray diffraction (XRD) and light output measu...
SmBaCuO (SmBCO) thin films and CeO buffer layers were deposited on γ-cut sapphire by pulsed laser deposition (PLD) and characterized with X-ray diffraction (XRD) and atomic force microscope (AFM). The θ–2θ XRD scans of the SmBCO/CeO/sapphire structures revealed that the CeO and SmB...
RHEED, XRD, and TEM, demonstrate that the VTiO3 films condense in a primarily c-axis oriented corundum structure under the low oxygen growth conditions on Al2O3(0001). This suggests that the film should have a VTiO3 composition. The main challenge is in describing the charge state of ...