x-ray diffraction (XRDAsymmetric (10L) XRD peaks have been employed as a measure of epitaxial quality for aluminum nitride (AlN) nucleation layers (NL) deposited on sapphire substrate. Epitaxial AlN films have been deposited on 2-6" sapphire substrate by reactive sputtering. FWHM of AlN (103...
The preexposure before growth for 30 min at 600°C ensured an oxygen-terminated sapphire surface, which allowed the first monolayer of ZnO to conform to the oxygen sublattice of the Al2O3 substrate and thus minimize the lattice mismatch. The XRD rocking curve of ZnO showed a reasonably ...
InGaN/ GaN multi-quantum-wells (MQW鈥檚) structure is grown on the separated sapphire substrate later and is compared with that grown on the conventional substrate under the same condition by using PL and XRD spectrum.HuangJ.ZhengQ. h.
Sapphire(Al2O3)is an excellent substrate material for the epitaxial growth of various thin films. Sapphire has excellent high-temperature resistance, chemical corrosion resistance, electrical insulation, wide optical transmission, unrivaled mechanical hardness, and wear...
1.The effects of sapphire substrate mis-cut angle on the properties of GaN films;蓝宝石衬底的斜切角对GaN薄膜特性的影响 2.Growth of GaN film by HVPE was carried out on MOCVD-GaN template and sapphire substrate.采用氢化物气相外延(HVPE)方法,以蓝宝石作衬底,分别在MOCVD-GaN模板和蓝宝石衬底上直接...
(111) film to bulge and peel off easily, while the graphene film remains on the sapphire substrate without degradation. Field-effect transistors fabricated on as-grown graphene exhibited good electronic transport properties with high carrier mobilities. This work breaks a bottleneck of synthesizing ...
The crystal structure of the β-Ga2O3 film heteroepitaxially grown on the CM6 sapphire substrate was investigated by XRD ω-2θ scan as shown in Fig. 1a, which exhibits the typical diffraction peaks of (-201), (-402), and (-603) planes in β-Ga2O3. The crystal quality of the hete...
(DCXRD),three-dimension visible optics microscope(OM),scanning electron microscope (SEM) and atomic force microscope(AFM).These results indicate that the quality of GaN films grown on sapphire substrate that is chemically etched for 50 minutes is the best.High-resolution double crystal X-ray ...
Up to date, sapphire substrate is still the preferred choice for AlN heteroepitaxy due to its high transparency in the UV region and low cost. However, epitaxy of AlN template with low TDD remains a challenge due to the serious mismatch between AlN and sapphire in terms of lattice constant ...
The crack-free Si-doped n-Al0.28Ga0.72N epitaxial films with high-temperature (HT) AlN interlayer were successfully grown on c-plane sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The high resolution X-ray diffraction (XRD) measurement results demonstrate that the density ...