and Y.N. performed RHEED, LEED and in-plane XRD test and data analysis. L.M., R.D. and J.W. performed DFT calculations. S.G. and P.W. performed the transmission electron microscopy characterization and data analysis. X.C. and L.L. contributed to spectral characterizations, including ...
performed the RHEED, LEED and XRD characterizations and data analysis. L.M. and J.W. performed the density functional theory calculations. Z.H., S.G. and P.W. performed the TEM and data analysis. X.C. and Z.L. contributed to the spectral characterizations, including PL, Raman ...
XRD results at different reflections showed that there are more stacking faults in the samples without nitridation.doi:10.1002/1521-396X(200112)188:23.0.CO;2-BX.L. SunState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS, Beijing 100083, ChinaHui Yang...
XRD also verified slight change of peak position from AlN film along both out of plane and in-plane directions. 机译:我们通过电子回旋共振等离子体增强溅射沉积(ECR溅射)在c面蓝宝石衬底上制备了AlN膜。 X射线衍射(XRD)验证了AlN薄膜的外延生长,其摇摆曲线的半峰全...
1 [12]. The crystallinity of the AlN films and the lattice constants were determined by X-ray diffraction (XRD) analysis with an asymmetric Ge(220) monochromator for Cu K-alpha 1 (0.154 nm). The surface morphology and dislocation characterization were examined by atomic force microscopy (AFM)...
The microstructure of epitaxial δ-Bi 2O 3 thin films deposited by means of atmospheric pressure halide chemical vapour deposition on a c-sapphire substrate surface at 800 °C using BiI 3 and O 2 as starting materials has been investigated by X-ray diffraction (XRD) and transmission electron ...
of mosaic structures, such as lateral and vertical coherence lengths, tilt and twist angle and heterogeneous strain and dislocation densities (edge and screw dislocations) of the InGaN epilayers and GaN template layers were investigated by using high-resolution X-ray diffraction (HR-XRD) measurements...
XRDOhmicm-plane sapphireplane (1–100) sapphire substrates by using metal-organic chemical vapor deposition. The linewidths of the omega rocking curves of the semipolar GaN films were 498 arcsec along the [11–23] direction and 908 arcsec along the [10–10] direction. The properties of ...
AFM and XRD characterizations. J.Z. performed the TEM characterization for 2D materials. C.C., Y.H. and B.T. performed the focused ion beam analysis, HR–TEM, HAADF–STEM and energy dispersive spectroscopy characterizations for the cross-section. J.D. and T.F. performed the LEED and STM...
Fig. 4. XRD measurements of the β-Ga2O3 epilayer structure (N+/N-/UID) grown with different O2 flow rates using the (a) (2¯01) plane rocking curves and (b) j scanning about (4¯01) plane. To analyze the Si concentrations in the N+ and N- layers, Fig. 5 shows the typi...