The epitaxial relationship between VO2andc-plane sapphire can be concluded as be${m{VO}}_{m{2}} \\left[ {{m{010}}} ight]{m{ }}\\left\\| {{m{Al}}_{m{2}} {m{O}}_{m{3}} \\left[ {{m{0001}}} ight]\\,{m{and}}\\,{m{VO}}_{m{2}} {m{ }}\\left({{m{\...
In this work, we have investigated the effect of growth temperature on β-Ga2O3 films grown on c-plane sapphire substrates using LPCVD. We performed growths by varying temperatures from 800 °C to 950 °C while keeping all other growth parameters (Ar/O2 gas flow rates, growth pressure, ...
ples A( c) and B( d) grown on (0001) sapphire substrate. 1042 发 光 学 报第35 卷 ZnO层的生长速率估算,样品A中MgO缓冲层厚 约5 nm,Zn 组分渐变增加的 MgZnO缓冲层厚约 35 nm;样品B 中ZnO缓冲层厚约20 nm,Mg 组分 渐变增加的 MgZnO 缓冲层厚约 55 nm。 利用能 量色散X 射线光谱仪(EDXS...
In summary, the β-Ga2O3 thin films were deposited on r-plane and c-plane sapphire substrates by PA-MBE. The microstructure of the β-Ga2O3 thin films were analyzed by XRD and TEM. (2¯01)-oriented β-Ga2O3 thin films were grown on c-plane sapphire. The β-Ga2O3 thin films ...
The fs radiation source was an 800 nm output pulse from a regenerative amplified Ti: sapphire laser system, delivering 35 fs pulse at 6 mJ and 1 KHz. The 800 nm pump pulse was split into two beams via a 50% beam splitter. The transmitted beam was directed to a TOPAS Optical ...
?采用低压化学气相沉积方法在c面蓝宝石衬底上异质外延生长出高结晶质量和良好表面形貌的6h-sic薄膜,研究了c_3h_8气体流速对薄膜结晶质量的影响.随着c_3h_8气体流速的降低,薄膜的结晶质量先增加后降低,表明薄膜的生长在开始阶段受表面反应控制,而后受质量输运控制.所得到的结晶质量最好的6h-sic薄膜,其摇摆曲线半高...
The electrolyte (0.1 M KOH) was pumped into a sapphire window at a constant flow rate of 5 ml min−1 by using a peristaltic pump over the cathode GDE, and the thickness of the electrolyte level on the cathode surface was 1.5 mm. CO2 was supplied to the back of the ...
Strain analysis of a GaN epilayer grown on a c-plane sapphire substrate with different growth times. J. Mater. Sci. 42, 3569–3572 (2007). 7. Dai, Y. et al. Influence of V/III ratio on stress control in GaN grown on different templates by hydride vapour phase epitaxy. RSC Adv. 4...
Realization of Conductive n-Type Doped α-Ga2O3 on m-Plane Sapphire Grown by a Two-Step Pulsed Laser Deposition Process Structural and electrical properties of undoped and doped α-Ga2O3 thin films grown by pulsed laser deposition on m-plane sapphire in a two-step process ar... S Vogt,C...
generated coherently through photoexcitation. The delocalized nature of these large polarons was verified from computations of the wavefunction of the lowest-energy exciton, as well as magneto-optical spectroscopy measurements. The mobilities reached up to 83 cm2·V−1·s−1in the in-plane dir...