Electronic Band Structure of In-Plane Ferroelectric van der Waals 系统标签: ferroelectric waals band der plane van Electronicbandstructureofin-planeferroelectricvanderWaalsβ´-In2Se3JamesL.Collins1,2,3*,ChutianWang3,4,AntonTadich3,5,YuefengYin3,4,ChangxiZheng1,2,3,JackHellerstedt1,2,3,Anton...
U. RösslerM. Schulz (ed.)Springer Berlin HeidelbergIn2Se3 band structure, energy gaps, in Ternary Compounds, Organic Semiconductors, ed. O. Madelung, U. R¨ossler and M. Schulz, Springer Berlin Heidelberg, 2000, vol. 41E, pp. 1-5....
Magnetoreflection experiments involving both intraband and interband transitions can provide valuable information about the electronic band structure of se... GB Wright,B Lax - 《Journal of Applied Physics》 被引量: 52发表: 1961年 Temperature dependence of optical properties (3HgSe)0.5(In2Se3)0.5...
The band-gap of γ-In2Se3 is approximately 1.9 eV. La banda proibita (band-gap) del γ-In2Se3 è approssimativamente 1,9 eV. WikiMatrix Variable index liquids or liquid crystals injected into the network alter the ratio and band gap. I liquidi ad indice variabile o cristalli liq...
(b) Band structure of Sn-doped CuMS2 (M 5 In, Ga). the NIR region, the more efficient solar energy conversions were yielded in photocatalytic reactions and photoelectrochemical cells. Results In order to evaluate the ball-milling method, the harvested CuMS2 (M 5 In, Ga) powders were ...
The objective of the investigation was to study the absorption spectra of the ternary compounds CuGaS//2, CuInS//2, AgInS//2, and of the CuGa//xIn//1//31 //xS//2 and AgGa//xIn//1// minus //xS//2 solid solutions in the spectral range adjacent to the fundamental absorption edge....
In2Se3 band structure, energy gapsdoi:10.1007/10717201_826Summary This document is part of Subvolume E 'Ternary Compounds, Organic Semiconductors' of Volume 41 'Semiconductors' of Landolt-Brnstein - Group III Condensed Matter.Collaboration: Authors and editors of the volumes III/17H-17I-41E...
In2Se3BandgapEngineering Bandstructure of two-dimensional (2D) materials is one of the strong requirements to increase their effectiveness in various applications. Among many methods, constructing van der Waals heterostructures (vdW_HTS) is one of the proven method to tune the bandstructure of the ...
These crystals are layered and keep the α-In 2Se 3 defect hexagonal wurtzite-like structure, with cationic lattice vacancies. For all compounds the energy gap is temperature dependent and the absorption edges shift to lower energy values with increasing temperature. An almost linear variation of ...
In this work, by using the first-principles calculations, we investigate the ferroelectric and dipole control of electronic structures of the 2D ferroelectric heterostructure InTe/In2Se3. It is found that band alignment is closely dependent on the ferroelectric polarization of In2Se3. By switching ...