Monolayer WSe2Optical bandgapP(VDF-TrFE)PiezoelectricityELECTRONIC-STRUCTUREMOS2TRANSITIONOPTOELECTRONICSWS2Ferroelectric field-effect transistors (FeFETs) hold great promises for application in modern semiconducting industry as memory or logic devices. Intensive studies have been done on improving the performance...
1. Figure 1a illustrates a simple generic scheme of the band structure of a WSe2 monolayer, as it is found in a close vicinity of the direct bandgap at the two K + and K− points of the Brillouin zone. We consider only three relevant bands (per each K + and K− point...
Structures, electronic properties, and phonon dispersions of monolayer MX_2 (M = Mo, W; X = S, Se) under various types of mechanical strains are investigat... CH Chang,X Fan,SH Lin,... - 《Physical Review》 被引量: 0发表: 2013年 . I. Band-structure calculations and photoelectron ...
Zhang, Y. et al. Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2 .Nature Nanotech.9, 111–115 (2014). ArticleCASGoogle Scholar Mak, K. F., He, K., Shan, J. & Heinz, T. F. Control of valley polarization in monolayer MoS2 by ...
Physical properties of monolayer Mn(BiTeS)2 and its applications in sub–3 nm spintronic devices. Phys Rev B , 2023 , 108: 184413 CrossRef ADS Google Scholar [35] Besse R, Silveira J F R V, Jiang Z, et al. Beyond the Anderson rule: importance of interfacial dipole and hybridizat...
STS measured on monolayer (bilayer) MoSe2 shows an electronic band-gap of ~2.1–2.25 eV (~1.6–1.7 eV) (Liu et al., 2014; Ugeda et al., 2014). The exciton binding energies (Eg-Eopt) were estimated for both ML and BL WSe2 and MoSe2. The binding energies were observed to be ~...
Energy band engineering is an important strategy to modulate the properties of 2D TMDCs. In this contribution, we highlight the recent progress in the energy band engineering of 2D TMDCs based on two aspects: Intrinsic and extrinsic modulations. The energy band engineering strategies mainly include ...
Strain effects on the spin-orbit induced band structure splittings in monolayer MoS2 and graphene The strain effects on the spin-orbit-induced splitting of the valence-band maximum and conduction-band minimum in monolayer MoSand the gap in graphene are ... T Cheiwchanchamnangij,WRL Lambrecht,Y...
The electronic band structure and crystal structure are the two complementary identifiers of solid-state materials. Although convenient instruments and reconstruction algorithms have made large, empirical, crystal structure databases possible, extracting
1,2,3 Gallium selenide (GaSe) belongs to the semiconducting 2D family and has a layered structure exhibiting in-plane covalent bonding and weak van der Waals interlayer interaction. In the unit cell, two Ga atoms are sandwiched by two planes of Se atoms, forming a monolayer with Se-Ga-Ga...