Monolayer WSe2Optical bandgapP(VDF-TrFE)PiezoelectricityELECTRONIC-STRUCTUREMOS2TRANSITIONOPTOELECTRONICSWS2Ferroelectric field-effect transistors (FeFETs) hold great promises for application in modern semiconducting industry as memory or logic devices. Intensive studies have been done on improving the performance...
1. Figure 1a illustrates a simple generic scheme of the band structure of a WSe2 monolayer, as it is found in a close vicinity of the direct bandgap at the two K + and K− points of the Brillouin zone. We consider only three relevant bands (per each K + and K− point...
The electronic band structure and crystal structure are the two complementary identifiers of solid-state materials. Although convenient instruments and reconstruction algorithms have made large, empirical, crystal structure databases possible, extracting
Understanding the possibility of band-gap engineering in multilayers composed of two-dimensional materials is extremely important for modeling and creation of novel electronic and photonic devices. Stacking of WS2and WSe2monolayers looks particularly attractive for applications due to direct gap of resulting...
STS measured on monolayer (bilayer) MoSe2 shows an electronic band-gap of ~2.1–2.25 eV (~1.6–1.7 eV) (Liu et al., 2014; Ugeda et al., 2014). The exciton binding energies (Eg-Eopt) were estimated for both ML and BL WSe2 and MoSe2. The binding energies were observed to be ~...
Spin–orbit coupling in the band structure of monolayer WSe2 We used angle-resolved photoemission spectroscopy (ARPES) to map out the band structure of single-layer WSe. The splitting of the top of the valence band b... D Le,A Barinov,E Preciado,... - 《J Phys Condens Matter》 被引...
reported the large area bottom-up hetero-epitaxial growth of SiC monolayer54. Layered SfeilileCmctshroaosnnib4ceHden-eSvciiCocemsaubpbipnstleirdcaatwteioibtnhysmo2,5te5h,t5ea6r.l–I2onDrtghmainsaitcceorcnihatelesmxitin,ccHallurvudabipnišogárkSdnee,tp Aaolls.Nirt,ieoacnenndm...
We have performed similar calculations in the case of a ${\\mathrm{WSe}}_{2}$ monolayer deposited on stacked hBN layers. These results are compared to the recently proposed quantum electrostatic heterostructure approach.doi:10.1103/PHYSREVB.98.245126I. Gerber...
MoSe2-WSe2 lateral heterostructures received: 20 April 2016 accepted: 12 July 2016 Published: 16 August 2016 Xiaohui Hu1, Liangzhi Kou2 & Litao Sun1 The direct band gap of monolayer semiconducting transition-metal dichalcogenides (STMDs) enables a host of new optical and electrical ...
Zhang, Y. et al. Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2 .Nature Nanotech.9, 111–115 (2014). ArticleCASGoogle Scholar Mak, K. F., He, K., Shan, J. & Heinz, T. F. Control of valley polarization in monolayer MoS2 by ...