visible and ultraviolet spectra of inorganic solids/ band edge exciton spectrareflection spectrasemiconductorelectroreflectanceReflection spectra have been measured on semiconducting SmS, SmSe and SmTe single crystals at 2 K in the photon energy region of 3 6 eV. From a comparison of the spectra in ...
In this report, the band-edge exciton fine structure and in particular its exciton and biexciton dynamics in high quality crystals of (PEA)2PbI4 are investigated. A comparison of bulk and surface exciton lifetimes yields a room temperature surface recombination velocity of 2x10^3cm/s and an ...
Band-edge excitons of few-layer nickel phosphorous trisulfide (NiPS) are characterized via micro-thermal-modulated reflectance (μTR) measurements from 10 to 300K. Prominent μTR features of the A exciton series and B are simultaneously detected near the band edge of NiPS. The A exciton series ...
We present a theoretical analysis of the band-edge exciton structure in nanometer-size crystallites of direct semiconductors with a cubic lattice structure or a hexagonal lattice structure which can be described within the framework of a quasicubic model. The lowest energy exciton, eightfold degenerate...
Layer-dependent exciton polarizability and the brightening of dark excitons in few-layer black phosphorus Article Open access 01 September 2023 The band-edge excitons observed in few-layer NiPS3 Article Open access 05 January 2021 A common optical approach to thickness optimization in polymer an...
In addition, the parameters that describe the temperature dependence of the transition energies and broadening parameters of the band edge excitonic transitions... DO Dumcenco,YS Huang,HP Hsu,... - 《Journal of Applied Physics》 被引量: 50发表: 2010年 Band-Edge Exciton Fine Structure of Single...
57. This was first discovered by McGuigan et al. in a lightly Cu doped silicon substrate and reported to exhibit an isoelectronic bound exciton nature in the ground states55,56,57. However, the defect induced lattice distortion, as well as the photophysics and radiative dynamics of its bound...
The total electron and hole binding energy EB, associated with the bound exciton localized to this defect, was calculated to be 225.2 meV by subtracting the transition energy of *Cu00 by the silicon bandgap at low temperature. Like the T center, EB ≫ E2 probably suggests that this 0.56 ...
Continuous‐wave and time‐resolved photoluminescence spectroscopies have been employed to study the band‐edge transitions in GaN epitaxial layers grown by plasma assisted molecular beam epitaxy. In addition to the neutral‐donor‐bound exciton transition (theI2line), a transition line at about 83 me...
Using ab initio density functional theory (DFT) calculations, we conclude that the dynamic band structure is caused by a photoinduced shear strain in the Te film that breaks the screw symmetry of the crystal. The band-edge anisotropy is also reflected in the hot carrier decay rate, which is ...