In this report, the band-edge exciton fine structure and in particular its exciton and biexciton dynamics in high quality crystals of (PEA)2PbI4 are investigated. A comparison of bulk and surface exciton lifeti
Shadow cutoff rigidity, Psh: The rigidity value at which the edge of the shadow cone lies in the direction concerned. Penumbra: The rigidity range lying between the main and the Störmer cutoff rigidities. Penumbral band: A continuous set of rigidity values, within the penumbra, all members ...
In epitaxial quantum dots, strain is used to switch between heavy and light holes in the ground-state exciton6, or to minimize the meV fine-structure splitting between bright excitons7. Colloidal nanocrystals (NCs) form a particular class of materials in which strain can be exploited to ...
(PA) inserted between p-Si and n-TiO2heterojunction creates a dipole layer, which can be represented by a step in the vacuum energy level, leading to the shift of the band edge and increased band bending (Fig. 2b). As a result, the optimized band alignment demonstrated great improvement ...
The total electron and hole binding energy EB, associated with the bound exciton localized to this defect, was calculated to be 225.2 meV by subtracting the transition energy of *Cu00 by the silicon bandgap at low temperature. Like the T center, EB ≫ E2 probably suggests that this 0.56 ...
while a hydrogen atom is bonded with one of the carbon atoms forming aC1hsymmetry53. The T center is hypothesized to be formed by capturing an interstitial carbon-hydrogen complex at a substitutional carbon site54. Electronically, the T center site includes a bound exciton and an unpaired elect...
λmax (CHCl3) =710 nm, λband edge (CHCl3)=780 nm, band gap (CHCl3)=1.59 eV, λmax (film)=700-760 nm, λband edge (film)=855 nm, band gap (film)=1.45 eV, HOMO=−5.3 eV, −5.7 eV (electrochem), LUMO=−3.85 eV, −4.25 eV, μ+=2×10−2 cm2/Vs (TOF), 1×...
Here, the band‐edge exciton fine structure and in particular its exciton and biexciton dynamics in high quality crystals of (PEA)2PbI4 are investigated. A comparison of bulk and surface exciton lifetimes yields a room temperature surface recombination velocity of 2 × 103 cm s1 and an ...
As a result, the quasi-type-II CdSe/CdS core/shell QDs exhibit a significant improvement of the multiexciton decay, indicating suppression of Auger recombination. In addition, the local electric field of spatially separated electrons/holes in type-II heterojunctions leads to a strong exciton–...
Control of fine-structure splitting and biexciton binding in InxGa1−xAs quantum dots by annealing. Phys. Rev. B 2004, 69, 161301. [CrossRef] 21. Babin, H.-G.; Bart, N.; Schmidt, M.; Spitzer, N.; Wieck, A.D.; Ludwig, A. Full wafer property control of local droplet etched ...