The XRD, Raman, XPS, and EDAX results strongly confirmed the presence of desired phases of MoO3 and gamma-In2Se3 layers in heterostructure without forming any impurity or alloy. FESEM micrographs revealed a uniform, dense grain structure. Optical analysis of MoO3/gamma-In2Se3 done by UV-...
Gamma-in2se3Cu(inga)se-2Co-evaporationSolar-cellsCrystal-structureEfficiencyIn2se3Cu(In,Ga)Se-2 (CIGS) films were elaborated in a new 'two stages' process using gamma-ln(2)Se(3) as thin film precursor. The first stage consists on the elaboration of this precursor and in the second Cu...
The energy relaxation of electrons in gamma-In2Se3 nanorods was investigated by the excitation-dependent photoluminescence (PL). From the high-energy tail of PL, we determine the electron temperature (T (e)) of the hot electrons. The T (e) variation can be explained by a model in which ...
gamma-In2Se3 phaseIn the present report, we have studied the structural and optical change in the In2Se3 thin films prepared by the thermal evaporation method, deposited on a glass substrate and annealed at 250 degrees C. Both the structural and optical studies revealed the formation of gamma...
The invention provides a preparation method of a gamma-In2Se3 film with (006) preferred direction and belongs to the technical field of materials. The preparation method comprises the following steps: A, cleaning a substrate; B, sputtering an In2Se3 film: namely mounting a high-purity indium-...
Thin Solid FilmsEmziane, M. and R.L. Ny, 2000. Photoconductivity of textured -In2Se3-xTex(0 M. Emziane, R. Le Ny, Photoconductivity of textured g-In2Se3AxTex (0 x 0.5) thin films, Thin Solid Films 366 (2000) 191e195, https://doi.org/10.1016/ S0040-6090(00)00753-7....
In this work, we present the assembly of a gamma-In2Se3/GaAs heterostructure-based photodetector linear array composed of 1 x 10 device units. The layered gamma-In(2)Se(3)films with a well-defined pattern are deposited directly onto a planar GaAs substrateviaradio-frequency (RF) magnetron ...
Crystals grown in the direction of high-energy facets have reduced surface energy, a small portion of high-energy crystal facets, and high photocatalytic activity. In this work, gamma-In2Se3 nanoparticles with predominantly exposed {110} facets are synthesized hydrothermally in the presence of ...
The In2Se3 films on (111) Si substrate were pinhole-free with homogeneous and lamellar structures. It was found that by properly controlling the substrate temperatures, single-phase gamma-In2Se3 films with fairly good optical properties can be well fabricated. Photoluminescence spectra, of single-...