The energy relaxation of electrons in gamma-In2Se3 nanorods was investigated by the excitation-dependent photoluminescence (PL). From the high-energy tail of PL, we determine the electron temperature (T (e)) of the hot electrons. The T (e) variation can be explained by a model in which ...
In2se3Cu(In,Ga)Se-2 (CIGS) films were elaborated in a new 'two stages' process using gamma-ln(2)Se(3) as thin film precursor. The first stage consists on the elaboration of this precursor and in the second Cu and Ga were evaporated and selenized at low temperature (425 degreesC)....
IN2SE3EFFICIENTNANOCRYSTALSDEGRADATIONABSORPTIONDeveloping efficient semiconductor photoanodes demonstrating strong light absorption, efficient separation of photogenerated charge carriers, and reduced charge carrier recombination rate can benefit PEC water splitting. Integrating a wide band gap semiconductor with ...
gamma-In2Se3 phaseIn the present report, we have studied the structural and optical change in the In2Se3 thin films prepared by the thermal evaporation method, deposited on a glass substrate and annealed at 250 degrees C. Both the structural and optical studies revealed the formation of gamma...
The invention provides a preparation method of a gamma-In2Se3 film with (006) preferred direction and belongs to the technical field of materials. The preparation method comprises the following steps: A, cleaning a substrate; B, sputtering an In2Se3 film: namely mounting a high-purity indium-...
Thin Solid FilmsEmziane, M. and R.L. Ny, 2000. Photoconductivity of textured -In2Se3-xTex(0 M. Emziane, R. Le Ny, Photoconductivity of textured g-In2Se3AxTex (0 x 0.5) thin films, Thin Solid Films 366 (2000) 191e195, https://doi.org/10.1016/ S0040-6090(00)00753-7....
Crystals grown in the direction of high-energy facets have reduced surface energy, a small portion of high-energy crystal facets, and high photocatalytic activity. In this work, gamma-In2Se3 nanoparticles with predominantly exposed {110} facets are synthesized hydrothermally in the presence of ...
In this work, we present the assembly of a gamma-In2Se3/GaAs heterostructure-based photodetector linear array composed of 1 x 10 device units. The layered gamma-In(2)Se(3)films with a well-defined pattern are deposited directly onto a planar GaAs substrateviaradio-frequency (RF) magnetron ...
M. Growth and Properties of Single-Phase γ-In2Se3 Thin Films on (111) Si Substrate by AP- MOCVD using H2Se Precursor. Sol. Energy Mater. Sol. Cells 2007, 91, 888-92.Lyu, D. Y. et al. Growth and properties of single-phase γ-In2Se3 thin films on (111) Si substrate by AP-...