The invention especially relates to an alpha-In2Se3 nano-grade flower-ball solvothermal synthesizing method. According to the method provided by the invention, oleic acid is adopted as a solvent, ascorbic acid is adopted as a reducing agent, and indium nitrate and selenium powder are subjected ...
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We show that the graphene/alpha-In2Se3 heterostructure has combined advantages of ultrafast relaxation (tau(1) similar to 78 fs, tau(2) similar to 14 ps) and a large effective nonlinear absorption coefficient (beta(eff) similar to -1.2 x 10(4) cm/GW) with relatively large modulation ...
alpha-In2Se3 is one of the interesting 2D vdW materials for photodetectors because of the interrelated in-plane (IP) and out-of-plane (OOP) polarizations. It has been demonstrated that the polarizations can be used to regulate photoresponsivity of the alpha-In2Se3 nanoflakes based ...
Alpha-phase indium selenide (伪-In2Se3) is a ferroelectric semiconductor with spontaneous electric polarization. Here, we report an experimental demonstration of the BPV effect in 伪-In2Se3 films along the out-of-plane direction by utilizing graphite films as transparent electrodes. A short-circuit...
Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ\nferroelectric semiconducting thin crystals of {\\alpha}-In2Se3 as the channel\nmaterial as opposed to the gate dielectric in conventional ferroelectric FETs\n(FeFETs) were prepared and measured from room to the liquid-...
Devices showed two distinct detection peaks in spectral responsivity, one at 365 nm and another at 850 nm, corresponding to band edges of GaN and {\\alpha}-In2Se3 respectively, with considerable rejection in visible spectrum. Normalised responsivity values were found out to be ~70 mA/W at ...
2D semiconducting alpha-In2Se3 single crystals: Growth and huge anisotropy during transportalpha-In2Se3 single crystalAnisotropyTransport propertiesUsing the temperature gradient method, alpha-In2Se3 single crystals were successfully grown. Samples prepared using this method exhibited good crystallinity and ...
The metastable alpha-In2Se3 thin film is epitaxially integrated on H-passivated Si (1 1 1) substrates to build a novel heterojunction solar cell by molecular beam epitaxy. The growth of In2Se3 on H-Si(1 1 1) at low temperature initiates as an amorphous layer then followed by re-...