The invention especially relates to an alpha-In2Se3 nano-grade flower-ball solvothermal synthesizing method. According to the method provided by the invention, oleic acid is adopted as a solvent, ascorbic acid is adopted as a reducing agent, and indium nitrate and selenium powder are subjected ...
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Here, we demonstrate a switchable room-temperature ferroelectric diode built upon a 2D ferroelectric {\alpha}-In2Se3 layer as thin as 5 nm in the form of graphene/{\alpha}-In2Se3 heterojunction. The intrinsic out-of-plane ferroelectricity of the {\alpha}-In2Se3 thin layers is evidenced by...
We show that the graphene/alpha-In2Se3 heterostructure has combined advantages of ultrafast relaxation (tau(1) similar to 78 fs, tau(2) similar to 14 ps) and a large effective nonlinear absorption coefficient (beta(eff) similar to -1.2 x 10(4) cm/GW) with relatively large modulation ...
To ameliorate the low conductivity of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) (2.21 x 10(-3) S cm(-1)), alpha-In2Se3 nanosheets are directly added into PEDOT:PSS to obtain the PEDOT:PSS:alpha-In2Se3 composite film. The composite film exhibits excellent optical...
Devices showed two distinct detection peaks in spectral responsivity, one at 365 nm and another at 850 nm, corresponding to band edges of GaN and {\\alpha}-In2Se3 respectively, with considerable rejection in visible spectrum. Normalised responsivity values were found out to be ~70 mA/W at ...
Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ\nferroelectric semiconducting thin crystals of {\\alpha}-In2Se3 as the channel\nmaterial as opposed to the gate dielectric in conventional ferroelectric FETs\n(FeFETs) were prepared and measured from room to the liquid-...
2D semiconducting alpha-In2Se3 single crystals: Growth and huge anisotropy during transportalpha-In2Se3 single crystalAnisotropyTransport propertiesUsing the temperature gradient method, alpha-In2Se3 single crystals were successfully grown. Samples prepared using this method exhibited good crystallinity and ...
alpha-In2Se3 is one of the interesting 2D vdW materials for photodetectors because of the interrelated in-plane (IP) and out-of-plane (OOP) polarizations. It has been demonstrated that the polarizations can be used to regulate photoresponsivity of the alpha-In2Se3 nanoflakes based ...
The metastable alpha-In2Se3 thin film is epitaxially integrated on H-passivated Si (1 1 1) substrates to build a novel heterojunction solar cell by molecular beam epitaxy. The growth of In2Se3 on H-Si(1 1 1) at low temperature initiates as an amorphous layer then followed by re-...