Raman analysis indicates that the as-prepared film consists of both a and gamma-In2Se3 phases and the annealed film contains only gamma-In2Se3 phase. The absorption mechanism in the studied film follows the direct allowed transition. The optical band gap is found to be decreased with annealing...
The XRD, Raman, XPS, and EDAX results strongly confirmed the presence of desired phases of MoO3 and gamma-In2Se3 layers in heterostructure without forming any impurity or alloy. FESEM micrographs revealed a uniform, dense grain structure. Optical analysis of MoO3/gamma-In2Se3 done by UV-...