Optimized p-type multilayer WSe 2 FETs with Pd contacts were successfully fabricated, and excellent electrical characteristics were obtained: a hole mobility of 36 cm 2 V 1 s 1 ; a high on/off ratio, over 10 6 ; and a record low sub-threshold swing, SS =95mV/dec, which may be ...
近日,济南大学前沿交叉科学研究院逄金波、刘宏团队,调研了WSe2的合成、方法、性质和电子应用,并在InfoMat上发表了题为“WSe22D p-type semiconductor-based electronic devices for information technology: design, preparation, and applications”的综述论文。第一作者硕士研究生程绮琳等翻阅了WSe2材料及应用的近600篇...
近日,济南大学前沿交叉科学研究院逄金波、刘宏团队,调研了WSe2的合成、方法、性质和电子应用,并在InfoMat上发表了题为“WSe22D p-type semiconductor-based electronic devices for information technology: design, preparation, and applications”的综述论文。第一作者硕士研究生程绮琳等翻阅了WSe2材料及应用的近600篇...
We have addressed the persistent contact issue for 2D materials, achieving a distinct p-type nature, a vital advancement in the realm of PMOS for CMOS technology integration. Furthermore, device-to-device performance variations are also evaluated, contributing to standardizing the quality of the 2D...
Author Correction: Highly (001)-textured p-type WSe 2 Thin Films as Efficient Large-Area Photocathodes for Solar Hydrogen EvolutionA correction to this article has been published and is linked from the HTML and PDF versions of this paper. The error has been fixed in the paper....
www.nature.com/scientificreports OPEN Received: 5 June 2017 Accepted: 10 November 2017 Published: xx xx xxxx Correction: Author Correction Highly (001)-textured p-type WSe2 Thin Films as Efficient Large-Area Photocathodes for Solar Hydrogen Evolution Farabi Bozheyev 1,2,3,4, Karsten ...
Rao, V.M. Pathak, Growth of n-type and p-type WSe2 crystals using SeCl4 transporter and their characterization, J. Cryst. Growth 97 (1989) 675-679.M. K. Agarwal, V. V. Rao, and V. M. Pathak, "Growth of n-type and p-type WSe2 crystals using SeCl4 transporter and their ...
Moreover, conventional unipolar barrier photo- detectors are based on nBn or pBp structures (n- or p-type photon absorber, barrier layer, and n- or p-type photogenerated carrier collector) [7,19,22,28], where photogenerated carriers are easy to recombine with the majority carriers in the ...
This work demonstrates a WSe2/GaN heterojunction with different bandgaps and dimensionality for a high performance visible/ultraviolet dual-band photodetector. Two-dimensional (2D) p-type WSe2 was stacked on top of three-dimensional (3D) n-type GaN, enabling good construction of p鈥搉 junction ...
Carrier type control in multilayer WSe 2 FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe 2 thickness. The carrier type evolves with increasing WSe 2 channel thickness, being p-type, ambipolar, and n-type at thicknesses 5 nm, respectively. The thickness-dependent...