Optimized p-type multilayer WSe 2 FETs with Pd contacts were successfully fabricated, and excellent electrical characteristics were obtained: a hole mobility of 36 cm 2 V 1 s 1 ; a high on/off ratio, over 10 6 ; and a record low sub-threshold swing, SS =95mV/dec, which may be ...
近日,济南大学前沿交叉科学研究院逄金波、刘宏团队,调研了WSe2的合成、方法、性质和电子应用,并在InfoMat上发表了题为“WSe22D p-type semiconductor-based electronic devices for information technology: design, preparation, and applications”的综述论文。第一作者硕士研究生程绮琳等翻阅了WSe2材料及应用的近600篇...
近日,济南大学前沿交叉科学研究院逄金波、刘宏团队,调研了WSe2的合成、方法、性质和电子应用,并在InfoMat上发表了题为“WSe22D p-type semiconductor-based electronic devices for information technology: design, preparation, and applications”的综述论文。第一作者硕士研究生程绮琳等翻阅了WSe2材料及应用的近600篇...
However, the realization of the modulation in the electronic properties of p-type TMDs still remains challenging. Here, we report an enhanced p-type electrical transport behavior in a hybrid structure of graphene quantum dot (GQD)/two dimensional (2D) WSe2. The incorporation of GQDs onto the ...
We produce both n-type and p-type WSe2, having typical charge carrier densities of ~1015cm-3 at room temperature. X-ray diffraction on a WSe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, ...
WSe 2 is a layered-type semiconductor which exhibits strong anisotropy in its electronic properties. The photoresponse of this material is adversely affected by the presence of morphological defects at and near the surface. Passivation of recombination centers on the surface of n - and p -type WSe...
www.nature.com/scientificreports OPEN Received: 5 June 2017 Accepted: 10 November 2017 Published: xx xx xxxx Correction: Author Correction Highly (001)-textured p-type WSe2 Thin Films as Efficient Large-Area Photocathodes for Solar Hydrogen Evolution Farabi Bozheyev 1,2,3,4, Karsten ...
This work demonstrates a WSe2/GaN heterojunction with different bandgaps and dimensionality for a high performance visible/ultraviolet dual-band photodetector. Two-dimensional (2D) p-type WSe2 was stacked on top of three-dimensional (3D) n-type GaN, enabling good construction of p鈥搉 junction ...
Transition metal oxides show much promise as effective p-type contacts and dopants in electronics based on transition metal dichalcogenides. Here we report that atomically thin films of under-stoichiometric tungsten oxides (WO x with x < 3) grown on tungsten diselenide (WSe 2 ) can be used as...
Moreover, conventional unipolar barrier photo- detectors are based on nBn or pBp structures (n- or p-type photon absorber, barrier layer, and n- or p-type photogenerated carrier collector) [7,19,22,28], where photogenerated carriers are easy to recombine with the majority carriers in the ...