we utilize keV ion beams of H2+to irradiate layered WSe2 crystals and obtain efficient n-type doping effect for all irradiated crystals within a fluence of 1脳1014 protons路cm2(1e14).Moreover,the irradiated WSe2 remains an n-type semiconductor even after it is exposed to ambient conditions ...
We propose and experimentally demonstrate double-gated n-type WSe2 FETs with excellent top gate high-k dielectric layer. Under back gate control, the devices behave as n-type enhancement transistors, with ON/OFF current ratios larger than 6 orders of magnitude and a ON current close to 1 pA...
因此,本文研究N掺杂Graphene/WSe2(NG/WSe2)超晶格在Li-S电池方面的性能。 作者首先通过水热法和退火合成了NG/WSe2超晶格,并通过SEM、TEM、EDS、XRD表征了其形貌和结构,发现层间距随退火温度的变化而大范围变化。吸收光谱证明NG/WSe2比WSe2和NG对Li2S4具有更强的吸附能力。 电化学测试结果表明NG/WSe2负载S作为...
在制造Al2O3/Pt/TiN背栅岛堆叠后,使用PMMA辅助的湿法转移技术将V-WSe2从生长衬底转移到岛衬底。然后RIE使用SF6气体在5 ℃下30 s,用于分离5 µm×20 µm的V-WSe2条带。这些分离的V-WSe2薄膜位于岛的顶部,需要用作p型FET。通过这种方式,p型FET可以在衬底的任何位置制造,从而允许设计任何复杂的CMOS电路。
二硒化钨晶体 WSe2(Tungsten Diselenide)-N型 晶体尺寸 10毫米 电学性能:半导体,N型 晶体结构:六边形 晶胞参数:a = b = 0.328 nm, c = 1.298 nm, α = β = 90°, γ = 120° 晶体类型:合成 晶体纯度:>99.995%X-ray diffraction on a WSe2 single crystal aligned along the (001) plane. XRD ...
DFT计算结果表明超晶格结构具有良好的导电性,界面处存在由NG向WSe2的电荷转移。NG/WSe2比WSe2对多硫化锂具有更强的吸附能力,得益于N位点的帮助。Li离子在超晶格界面处的扩散势垒仅为0.16 eV,低于WSe2界面的0.19 eV。 原文链接:https://doi.org/10.1002/adfm.202201322...
MXene Electrode for the Integration of WSe2 and MoS2 Field Effect Transistors Recently, MXenes, which are 2D early transition metal carbides and carbonitrides, have attracted wide attention because of their excellent conductivities. ... J Xu,J Shim,Park, Jin-Hong,... - 《Advanced Functional ...
Rao, V.M. Pathak, Growth of n-type and p-type WSe2 crystals using SeCl4 transporter and their characterization, J. Cryst. Growth 97 (1989) 675-679.M. K. Agarwal, V. V. Rao, and V. M. Pathak, "Growth of n-type and p-type WSe2 crystals using SeCl4 transporter and their ...
Stable n-doping of WSe2 using thin films of SiNx deposited on the surface via plasma-enhanced chemical vapor deposition is presented. Positive fixed charge centers inside SiNx act to dope WSe2 thin flakes n-type via field-induced effect. The electron concentration in WSe2 can be well controlle...
有鉴于此,近日,韩国成均馆大学Gil-Ho Kim等报道了利用边缘和表面接触的组合,在WSe2中形成横向p-n结二极管。在刻蚀的WSe2处出现非晶氧化钨,并在靠近边缘接触处形成结,为边缘和表面接触实现高开/关比,分别为107和108的值。该二极管可实现高达168 cm2V-1s-1的极高迁移率和103的整流比。300 K时,当背栅电压VG...