Within-wafer uniformity is traditionally measured by the signal-to-noise ratio (SNR), defined as the estimated standard-deviation of within-wafer measurements over the mean of those measurements, Unfortunately, in the presence of deterministic variations of the response over the wafer (such as the ...
wafer uniformity是晶片均匀性，区别在于across是跨越，横跨的意思，withing则是在什么范围内
网络晶圆内;内的均匀性;晶片内 网络释义
The within-wafer uniformity of pattern transfer on the suce of a large-size wafer is poor. This is usually caused by uneven film thickness and etching rate. A. 正确 B. 错误 如何将EXCEL生成题库手机刷题 > 下载刷刷题APP,拍照搜索答疑 > 手机使用 分享 反馈 收藏 举报 参考答案: A 复制...
(ILD) of a wafer;a controller for determining a polish recipe using the thickness profile, wherein the polish recipe is configured to substantially compensate for a non-uniformity of the thickness profile;a high-rate CMP platen configured to perform a high-rate CMP process on the ILD using ...
Novel methods for improving the within-wafer uniformity of a gate oxide layer on a semiconductor wafer substrate. According to a first embodiment, a gate oxide layer is formed on a wafer using conventional oxidation parameters and equipment. Next, the edge-thick gate oxide layer is nitridated ...
Methods for improving within-wafer uniformity of gate oxideChen ChiChunWang MingFangChen ShihChang
L-SHAPED TEOS GAS INJECTOR FOR LPCVD TEOS WITHIN-WAFER UNIFORMITY IMPROVEMENTSA new apparatus is provided for the deposition of one ormore layers of TEOS. The apparatus of the invention provides anL-shaped TEOS gas injector that is provided with a multiplicityof openings around its circumference ...
Closed loop control may be used to improve uniformity of within wafer uniformity using chemical mechanical planarization. For example, closed loop control may be used to determine a control profile for a chemical mechanical planarization process to more uniformly and consistently achieve the desired ...
A wafer may comprise a substrate layer and a plurality of vertical cavity surface emitting lasers (VCSELs) formed on or within the substrate layer. A respective trench-to-trench distance associated with the plurality of VCSELs may vary across the wafer based on a predicted variation of an ...