Continuous wafer-scale graphene on cubic-SiC(001) Nano Res. 2013; 6 (8):562–570.Alexander N. Chaika,Olga V. Molodtsova,Alexei A. Zakharov,Dmitry Marchenko,Jaime Sánchez-Barriga,Andrei Varykhalov,Igor V. Shvets,Victor Yu. Aristov.Continuous wafer-scale graphene on cubic-SiC(001)[J]. ...
SiC在电子、光电及量子计算设备中具有重要的作用。SiC基的发电设备可以代替Si基电子器件由于其具有较快的开关速率,低损耗和较高的阻断电压。高温环境会降低相关电子设备的性能,因此高热导率在相关电子及光电材料的热管理中至关重要。 相对于立方SiC, 六方6H-SiC具有复杂的晶体结构。然而,6H-SiC相对于立方SiC反而具有...
Previous studies show that the (111) crystal orientation has the minimum surface energy for the face-centered cubic (fcc) thin films. For example, the surface energy of Ni(111) is about 1.17 × 10–8 J/m2 which is lower than that of the Ni(100) orientation with 1.30 × ...
The atomic and electronic structure of graphene synthesized on commercially available cubic-SiC(001)/Si(001) wafers have been studied by low energy electro... AN Chaika,OV Molodtsova,AA Zakharov,... - 《纳米研究(英文版)》 被引量: 39发表: 2013年 ...
The decomposition of SiC can realize the integrated synthesis of GNRs30,31. The edge structures can be controlled through the organic synthesis of GNRs32,33. However, these GNR fabrication methods are limited to on-substrate structures. There are few methods for fabricating suspended GNRs, which ...
cubic SiChigh-temperature solution growthhigh-temperature surface tensionsolid–liquid interfacial energywide band gap semiconductorCubic silicon carbide (3C-SiC) has superior mobility and thermal conduction over that of widely applied hexagonal 4H-SiC. Moreover, much lower concentration of interfacial ...
Continuous wafer-scale graphene on cubic-SiC(001). Nano Res. 2013;6(8):562-570.Chaika, AN, Molodtsova, OV, Zakharov, AA, Marchenko, D, Sanchez-Barriga, J, Varykhalov, A, Shvets, IV, Aristov, VY (2013) Continuous wafer-scale graphene on cubic-SiC(001). Nano Res 6: pp. 562-...