A. N. Chaika et al., "Continuous wafer-scale graphene on cubic-SiC(001)", Nano Research 6, 562 (2013).Chaika A, Molodtsova O, Zakharov A, et al. Continuous wafer-scale graphene on cubic-SiC(001). Nano Res. 2013;6(8):562-570....
transport mechanisms, and suggest that 3C-SiC is an excellent wide-bandgap semiconductor for applications of next-generation power electronics as both active components and substrates. SiC在电子、光电及量子计算设备中具有重要的作用。SiC基的发电设备可以代替Si基电子器件由于其具有较快的开关速率,低损耗和较...
(SiC) as an emerging material, with its excellent physical and optical properties, has been widely used in a variety of power semiconductor devices and modules, and now it has also become a key material in the field of AR glasses across the border. The high refractive index, excellent heat...
Silicon Carbide (SiC) and its polytypes have been a part of human civilization for a long time; the technical interest of this hard and stable compound has been realized in 1885 and 1892 by Cowless and Acheson for grinding and cutting purposes, leading to its manufacture on a large scale....
Adding a mechanical degree of freedom to the electrical and optical properties of atomically thin materials can provide an excellent platform to investigate various optoelectrical physics and devices with mechanical motion interaction. The large scale fa
The 3C-SiC grown on off-axis Si, compared to that grown on on-axis Si, has lower surface roughness, better crystallinity, and smaller bow magnitude. Cubic silicon carbide (3C-SiC) grown on Si has many applications due to its low cost, chemical inertness, low lattice mismatch to III-...
High-Quality and Wafer-Scale Cubic Silicon Carbide Single Crystals Cubic silicon carbide (3C-SiC) has superior mobility and thermal conduction over that of widely applied hexagonal 4H-SiC. Moreover, much lower concentratio... G Wang,D Sheng,Y Yang,... - 《Energy & Environmental Materials》 ...
An SiC single crystal includes a low dislocation density region (A) where the density of dislocations each of which has a Burgers vector in a {0001} in-plane direction (mainly a direction parallel to a <11-20> direction) is not more than 3,700 cm/cm3. Such an SiC single crystal is ...
The present invention provides single-crystal silicon carbide and a single-crystal silicon carbide wafer of good-quality that are low in dislocations, micropipes and other crystal defects and enable high yield and high performance when applied to a device, wherein the ratio of doping element ...
These figures are provided to highlight the scale and/dimensional relationships between the various features of the prototype LEDs, such as the carrier, the epi region, the primary optic and the phosphor layer, according to various embodiments described herein. Specifically, FIG. 12A, is a side ...