A. Pavanello, "Impact of the series resistance in the I-V characteristics of nMOS junctionless nanowire transistors," ECS Trans., vol. 39, no. 1, pp. 231-238, 2011.R. T. Doria, R. D. Trevisoli, M. de Souza, and M. A. Pavanello, "Impact of the series resistance in the I-V...
图3中从连接PAD的NW到连接VSS的N+之间形成寄生的NMOS,在受到ESD冲击时,寄生MOS的GATE上瞬间耦合电压,可以使寄生MOS在短时间内导通,这样会进一步降低SCR的崩溃电压。 图2 降低崩溃电压的SCR的示意图 图3 进一步降低崩溃电压的SCR示意图 4 SCR的I-V曲线中二次崩溃现象对ESD性能的影响 图4是改进前SCR(见图2)的...
Run a “blank” test: Once the system is set up, it’s a good idea to run a “blank”, or empty, test to make sure everything is set up and configured properly. This test will establish a baseline current by measuring the I-V characteristics of the device ...
. . 37 5.3.5 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 5.3.6 Wake-up time from low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . 48 5.3.7 External clock ...
. . 71 Characteristics of communication interfaces . . . . . . . . . . . . . . . . . . . . . 72 6 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 6.1 SO8N package information . . ....
A new mixed-voltage I/O buffer having the characteristics of low-voltage operation and small-area realization is proposed. The proposed I/O buffer provides... JY Kim,YS Park,YH Jun,... - 《Ieice Electronics Express》 被引量: 3发表: 2009年 ...
Parameters that will vary with supply voltage are shown in the Typical Characteristics curves. INPUT COMMON-MODE VOLTAGE RANGE The input common-mode voltage range of the OPA379 family typically extends 100mV beyond each supply rail. This rail-to-rail input is achieved using a complementary input ...
Modeling of MOS transistors with nonrectangular-gate geometries The DC electrical characteristics of MOS transistors with nonrectangular-gate geometries are investigated. Closed-form analytical expressions relating the ... P Grignoux,RL Geiger - 《IEEE Transactions on Electron Devices》 被引量: 63发表...
This pin must have a filter capacitor with low ESR characteristics in order to minimize output ripple voltage. 7.3.4 Oscillator Frequency (RT) Oscillator frequency is selectable by means of a resistor placed at the RT pin. The switching frequency (f(SW)) can be set in the range of 200 ...
. . 43 5.3.5 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 5.3.6 Wake-up time from low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . 54 5.3.7 External clock ...