The transmitter-receiver comprises at least on PMOS transistor (MA), and a further NMOS transistor (MB) controlled by the control signal (emission-gd) in order to match the link AB to the two ends of the transm
The TTL−compatible inputs facilitate TTL to NMOS / CMOS interfacing. Device performance is similar to MM74HCT but with 1/2 the output current drive of HC / HCT. Features • Space Saving SOT23−5, SC−74A and SC−88A 5−Lead Package • Ultra Small MicroPak™ Leadless ...
Gain vs. input common mode voltage 100 10 10-2 Recommended resistor to place between the output of the op-amp and the capacitive load Vcc=3.3V, Vicm=1.65V Follower configuration 10-1 100 101 102 Capacitive load (nF) 103 DocID025993 Rev 3 15/31 31 Electrical characteristics Figure 32. ...
If input UVLO program- ming is not desired, connect EN/UVLO to VIN (see the Electrical Characteristics table for EN/UVLO rising and falling-threshold voltages). Driving EN/UVLO low disables the high-side FET and part enters into primary output discharge mode (explained in the Overcurrent ...
Features • Output Drive Capability: 10 LSTTL Loads With Suitable Pullup Resistor • Outputs Directly Interface to CMOS, NMOS and TTL • High Noise Immunity Characteristic of CMOS Devices • Operating Voltage Range: 2.0 to 6.0 V • Low Input Current: 1 mA • In Compliance With the ...
It is shown that by using both PMOS and NMOS differential pairs in the folding blocks, the overall input voltage range of the ADC can be increased to rail-to-rail. A novel self-adjustment method is also introduced to compensate for the different input–output characteristics of PMOS and NMOS...
du The internal circuit is composed of 3 stages ro including a buffer output, which enables high P noise immunity and stable output. te The M74HCT04 is designed to directly interface le HSC2MOS systems with TTL and NMOS components. so All inputs are equipped with protection circuits Ob ...
As discussed in Chapter 2, ESD is a very high current event. Therefore, ESD protection circuits should be able to handle a large amount of current without being destroyed. A number of semiconductor devices can be used to safely sink (source) this current
RL = 2 kΩ 3 45 60 200 300 mV 1 5 20 25 50 ±80 mA See Small-Signal Overshoot vs Capacitive Load in the Typical Characteristics section ZO Open-loop output impedance POWER SUPPLY f = 1 MHz, IO = 0 A 600 Ω IQ Quiescent current per amplifier IO = 0 A TA = –40°C to ...
PARAMETER TEST CONDITIONS OUTPUT CHARACTERISTICS VDD = 2.7 V At TA = 25°C, VIC = VDD/2, IOH = −1 mA At TA = –40°C to +125°C, VIC = VDD/2, IOH = −1 mA VDD = 5 V At TA = 25°C, VIC = VDD/2, IOH = −1 mA At TA = –40°C to +125°C, VIC = VDD...