Two-dimensional semiconductors for transistors. Nat. Rev. Mater. 1, 16052 (2016). Article Google Scholar Schwierz, F., Pezoldt, J. & Granzner, R. Two-dimensional materials and their prospects in transistor electronics. Nanoscale 7, 8261–8283 (2015). Article Google Scholar Iannaccone, ...
In the quest for higher performance, the dimensions of field-effect transistors (FETs) continue to decrease. However, the reduction in size of FETs comprising 3D semiconductors is limited by the rate at which heat, generated from static power, is dissipated. The increase in static power and the...
Two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have attracted tremendous interest for transistor applications. However, the fabrication of 2D transistors using traditional lithography or deposition processes often causes undesired damage and contamination to the atomically thin lattices...
Layered two-dimensional semiconductors have attracted tremendous attention owing to their demonstrated excellent transistor switching characteristics with a large ratio of on-state to off-state current,Ion/Ioff. However, the depletion-mode nature of the transistors sets a limit on the thickness of the ...
An in-memory computing architecture based on two-dimensional semiconductors for multiply-accumulate operations 来自 Nature 喜欢 0 阅读量: 179 作者:Y Wang,H Tang,Y Xie,X Chen,W Bao 摘要: In-memory computing may enable multiply-accumulate (MAC) operations, which are the primary calculations used ...
passivation layer on a single molybdenum disulfide channel using an electron beam evaporator, a transverse homogenous junction p-n diode was formed, enabling the rational design of two-dimensional tin selenide nanostructures that enabled the nanoscale vacuum transistor with high-performance field emission....
This will require transistor channels toreduce both in length and thickness. 这要求晶体管减少通道的长度和厚度。 However, transistors based on bulk (3D) semiconductors, such as silicon, germanium and III–V materials, suffer from substantially(大量地) increased surface and internal imperfections(缺陷)...
Spin-Hall effect and spin coherent waves in semiconductors with Rashba spin-orbit interaction -kinetic equations for the spin-density matrix, spin-charge coupled drift-diffusion equations are derived for a strongly confined twodimensional hole gas. ... P Kleinert,VV Bryksin - 《Physica Status Solid...
Two-dimensional semiconductors could be used as a channel material in low-power transistors, but the deposition of high-quality, ultrathin high-κ dielectrics on such materials has proved challenging. In particular, atomic layer deposition typically leads to non-uniform nucleation and island formation...
Since 2D metals can form the weaker chemical bonding interface with 2D vdWs semiconductors and efficiently suppress the metal-induced gap states in conventional Schottky junctions22,24,25. The metal-induced gap states are one of the important sources of the Fermi pinning effect2....