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Two-dimensional (2D) semiconductors could potentially replace silicon in future electronic devices. However, the low carrier mobility in 2D semiconductors at room temperature, caused by strong phonon scattering, remains a critical challenge. Here we show that lattice distortions can reduce electron–phono...
However, the reduction in size of FETs comprising 3D semiconductors is limited by the rate at which heat, generated from static power, is dissipated. The increase in static power and the leakage of current between the source and drain electrodes that causes this increase, are referred to as ...
Metal-oxide-semiconductor field effect transistors (MOSFET) based on two-dimensional (2D) semiconductors have attracted extensive attention owing to their excellent transport properties, atomically thin geometry, and tunable bandgaps. Besides improving the transistor performance of individual device, lots of...
Uniquely, the channel structure behaves as a vertical sub-nanometer nanoribbon for 2D semiconductors with the carrier transport perpendicular to the “ribbon” between the source (S) and drain (D) electrodes. Fig. 1c shows Synthesis of MoS2 and WSe2 by CVD technology The monolayer MoS2 was ...
has contributed towards two-dimensional semiconductors being one of the main focal points of Quantum Flagship to create disruptive technologies that give way to marketable devices that take advantage of the quantic properties of light and matter with, for example, uses in the field of signal encrypti...
Combining monolayers of different two-dimensional semiconductors into heterostructures creates new phenomena and device possibilities. Understanding and ex... Neil,R,Wilson,... - 《Science Advances》 被引量: 26发表: 2017年 Band offsets and strain in CdTe-GaAs heterostructures CdTe(111)-GaAs(001) ...
Layered two-dimensional semiconductors have attracted tremendous attention owing to their demonstrated excellent transistor switching characteristics with a large ratio of on-state to off-state current,Ion/Ioff. However, the depletion-mode nature of the transistors sets a limit on the thickness of the ...
Abstract The co-integration of logic switches and neuromorphic functions could be used to create new computing architectures with low power consumption and novel functionalities. Two-dimensional (2D) semiconductors and ferroelectric materials could be potentially used to make such devices, but integrating ...