& Zhou, P. Transistor engineering based on 2D materials in the post-silicon era. Nat Rev Electr Eng 1, 335–348 (2024). https://doi.org/10.1038/s44287-024-00045-6 Download citation Accepted26 March 2024 Published30 April 2024 Issue DateMay 2024 DOIhttps://doi.org/10.1038/s44287-024-...
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In this paper, field effect transistors (FET) based on different kinds of non-graphene materials are introduced, which are MoS 2 , WSe 2 and black phosphorus (BP). Those devices have their unique features in fabrication process compared with conventional FETs. Among them, MoS 2 FET shows ...
Two-dimensional materials for novel liquid separation membranes The latest breakthrough in 2D material-based membranes will be reviewed both in theories and experiments, including their current state-of-the-art ... Y Ying,Y Yang,W Ying,... - 《Nanotechnology》 被引量: 3发表: 2016年 Exploring...
Besides the planar transistor, the multibridge channel (MBC) structure based on the gate-all-around (GAA) technology37,38,39 has been developed to realize the transistor with a feature size below 3 nm. For the MBCFET, 2D materials have provided a self-aligned edge-contact technology which pav...
Here, we present a comprehensive investigation of core-insulator-embedded nanosheet field-effect transistors (C-NSFETs), focusing on their improved performance and device-to-device (D2D) variability compared to conventional NSFETs through three-dimensional device simulations. The C-NSFETs exhibit ...
In subject area: Engineering MOSFETs are voltage-controlled devices (Sze 1990) in which a metal electrode placed on top of an insulator (typically SiO2) on the silicon surface is used to control the flow of current between two ohmic contacts on the silicon. ...
Band structure engineering of monolayer MoS2 on h-BN: first-principles calculations suggest that the MoS/n-h-BN heterostructure could serve as a prototypical example for band structure engineering of 2D crystals with atomic layer precision... Z Huang,C He,Q Xiang,... - 《Journal of Physics ...
Intel’s Components Research group consistently pushes the boundaries of engineering by stacking transistors, taking backside power to the next level to enable more transistor scaling and improved performance, as well as demonstrating that transistors made of different materials can be integrated on the ...
High-performance p-type two-dimensional (2D) transistors are fundamental for 2D nanoelectronics. However, the lack of a reliable method for creating high-quality, large-scale p-type 2D semiconductors and a suitable metallization process represents import