& Zhou, P. Transistor engineering based on 2D materials in the post-silicon era. Nat Rev Electr Eng 1, 335–348 (2024). https://doi.org/10.1038/s44287-024-00045-6 Download citation Accepted26 March 2024 Publishe
Institute of Optoelectronic Display, National & Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, ChinaGengxu ChenInstitute of Optoelectronic Display, National & Local United Engineering Laboratory of Flat ...
Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology of Ministry of Education, College of Electronic Information and Optical Engineering, National Institute for Advanced Materials, Nankai University, Tianjin, 300350, ...
Besides the planar transistor, the multibridge channel (MBC) structure based on the gate-all-around (GAA) technology37,38,39 has been developed to realize the transistor with a feature size below 3 nm. For the MBCFET, 2D materials have provided a self-aligned edge-contact technology which pav...
-effect transistor sensors based on 2D materials, from the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes, to the challenges and opportunities for their commercialization. The present review provides a comprehensive overview on FET-based wearable ...
Figure 5a shows the device normalized current as a function of the laser incident power, Pinc, J Mater Sci (2023) 58:2689–2699 2695 Table 1 Comparison of recently reported representative photodetectors based on 2D materials Device Applied bias (V) Responsivity (AW-1) Detectivity (Jones) ...
20220504_Graphene and 2D Materials for Transistor, Memristor, Synaptic and Light是忆阻器memristor类脑芯片相关演讲,每周搬运更新,自制中文字幕的第41集视频,该合集共计41集,视频收藏或关注UP主,及时了解更多相关视频内容。
The team found that charging the system with the additional electrons in a process called n-type doping was important for creating the spins. "In contrast with previous work on other 2D materials, the n-type doping allowed us to achieve better control of the electronic spins," Professors Marum...
For engineering tasks, cross-sectioning can provide detailed information about the solder joint quality. Due to its destructive character, cross-sectioning for monitoring purposes is naturally not practical. Figure 19 Example of a properly mounted HSOG-8 package. Figure 20 Example of a properly ...
High-performance p-type two-dimensional (2D) transistors are fundamental for 2D nanoelectronics. However, the lack of a reliable method for creating high-quality, large-scale p-type 2D semiconductors and a suitable metallization process represents import