网络释义 1. 穿隧磁阻 此外,软磁薄膜的自旋磁化动态过程,也可经由在次奈秒的时间尺度下,测量穿隧磁阻(tunneling magnetoresistance)来进行 … www.alum.ntu.edu.tw|基于10个网页 2. 隧道磁电阻效应 隧道磁电阻效应,tunneling... ... )tunneling magnetoresistance隧道磁电阻效应) Tunnel magnetoresistance 隧道磁电阻...
Allegro’s new cutting-edge tunneling magnetoresistance (TMR) effect technology combined with the company’s vertical Hall technology (VHT) offers designers superior heterogeneous redundant sensor solutions that deliver industry-leading accuracy for adva
Allegro’s new cutting-edge tunneling magnetoresistance (TMR) effect technology combined with the company’s vertical Hall technology (VHT) offers designers superior heterogeneous redundant sensor solutions that deliver industry-leading accuracy for adva
Tunneling Magnetoresistance is defined as the spin-dependent quantum mechanical tunneling probability through a thin insulator, resulting in a tunnel magnetoresistance effect. AI generated definition based on: Encyclopedia of Materials: Science and Technology, 2001 ...
(2002). Tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor het- erostructures. Physica E, 13, 495-503.M. Tanaka and Y. Higo. Tunneling magnetoresistance in GaMnAs- AlAs-GaMnAs ferromagnetic semiconductor heterostructures. Physica E, 13(2-4):495-503, March 2002....
tunnelingmagnetoresistance(TMR)inthedilutedmag- neticsemiconductor(DMS)trilayerheterostructuresystem (Ga,Mn)As/AlAs/(Ga,Mn)As.Theexperimentallyobserved TMRratioisinreasonableagreementwithourresultbased onthetypicalmaterialparameters.Itisalsoshownthatthe TMRratiohasastrongdependenceonboththeitinerant- carrierdensityand...
(MTJ), we demonstrate the electrical detection of skyrmions by using the tunneling magnetoresistance (TMR) effect with a TMR ratio that reaches over 100% at room temperature. By building prototype three-terminal racetrack-like devices, we further show the electrical detection of mobile skyrmions by...
Tunnelingmagnetoresistance(TMR)refersto thedependenceoftheresistanceofaFM 1 |I|FM 2 (ferromagnet|insulator|ferromagnet)magnetictunnel junction(MTJ)ontherelativeorientationofthemagne- tizationdirectionsoftheferromagneticelectrodeswhen thesearechangedfrombeingantiparallel(AP)toparal- lel(P):TMR=(R AP −R P ...
Arrays of tunnel magnetoresistance sensors based on MgO as insulating layer are employed to detect magnetic microbeads. For single bead detection, elliptically shaped sensors of axis lengths of 400 and 100 nm are used. Due to high shape anisotropy a linear response of the sensor signal in a mag...
1.A tunneling magnetoresistance (TMR) element comprising:a ferromagnetic pinned layer structure;a nonmagnetic barrier layer;a first ferromagnetic amorphous free layer; anda second ferromagnetic amorphous free layer. 2.The TMR element of claim 1 wherein the second ferromagnetic amorphous free layer is ex...