网络释义 1. 穿隧磁阻 此外,软磁薄膜的自旋磁化动态过程,也可经由在次奈秒的时间尺度下,测量穿隧磁阻(tunneling magnetoresistance)来进行 … www.alum.ntu.edu.tw|基于10个网页 2. 隧道磁电阻效应 隧道磁电阻效应,tunneling... ... )tunneling magnetoresistance隧道磁电阻效应) Tunnel magnetoresistance 隧道磁电阻...
1) tunneling magnetoresistance 隧道磁电阻效应1. In recent years,large magnetic entropy change and tunneling magnetoresistance effects in magnetic perovskite-type compounds have been observed. 类钙钛矿型材料是一类物理内涵极其丰富的化合物,它是著名的高温超导材料、铁电材料、压电材料,又是庞磁电阻效应材料,...
For example, the MTJs of Co/Al 2O 3/Co with a tunneling magnetoresistance (TMR) ratio of 17 2%, the junction resistance of . 例如:利用狭缝宽度为 1 0 0 μm的金属掩模 ,直接制备出室温隧穿磁电阻比值为 1 7 2 %的磁性隧道结Co Al2 O3 Co,其结电阻为 76Ω ,结电阻和结面积的积矢为 ...
Tunneling magnetoresistance (TMR) heads have recently been explored to perform magnetic recording at areal densities beyond 40 Gb/in2.Various thin film techniques have been used in order for these TMR heads to exhibit good magnetic and TMR properties.Different head designs have been implemented into...
The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magneto
(MTJ), we demonstrate the electrical detection of skyrmions by using the tunneling magnetoresistance (TMR) effect with a TMR ratio that reaches over 100% at room temperature. By building prototype three-terminal racetrack-like devices, we further show the electrical detection of mobile skyrmions by...
Magnetic tunneling junctions (MTJs) with MgO tunnel barrier have been fabricated on both oriented and nonoriented buffer layers on Si(001) substrate by magnetron sputtering.FeCo∕MgO∕FeCoMTJs fabricated on oriented buffer layers show larger tunneling magnetoresistance (TMR) value up to 84% without ...
In this review, William Butler of the Center for Materials for Information Technology and Department of Physics, University of Alabama, USA gives a detailed explanation of the physical mechanisms of tunneling magnetoresistance (TMR) devices with emphasis on the preferential transmission of wavefunctions ...
Arrays of tunnel magnetoresistance sensors based on MgO as insulating layer are employed to detect magnetic microbeads. For single bead detection, elliptically shaped sensors of axis lengths of 400 and 100 nm are used. Due to high shape anisotropy a linear response of the sensor signal in a mag...
We have studied the tunneling magnetoresistance (TMR) ofGa0.94Mn0.06As∕AlAs(dnm)∕In0.4Ga0.6As(0.42nm)∕AlAs(dnm)∕Ga0.94Mn0.06Asdouble-barrier magnetic tunnel junctions with various AlAs thicknesses(d=0.8–2.7nm)grown onp+GaAs(001) substrates by low-temperature molecular-beam epitaxy. In so...