However, if the frequency command reference value is above 3Hz, the inverter starts smoothly from OHz. (Note 2) To set the bias/gain of a frequency command value by the potentiometers (1 RH and 2RH), it is necessary to select "RA" at the dip switch SW2 (For adjustment methods. see...
Figure 6. Schematic cross section of a floating-gate EEPROM (FLOTOX) cell. The physical mechanism used to program and erase the EEPROM cell is electron tunneling across the thin oxide region between the floating gate and the drain. In order to let electrons tunnel into the floating gate, the...
CROSS-REFERENCE TO RELATED APPLICATIONS This application is related to applications entitled, “METHOD FOR MAKING CARBON NANOTUBES”, filed *** (Atty. Docket No. US62159), “CARBON NANOTUBE ARRAY”, filed *** (Atty. Docket No. US62160), “LIGHT DETECTOR”, filed *** (Atty. Docket No. U...
FIG. 1 is a cross sectional structure chart of a thin film transistor according to one embodiment of the present invention; FIG. 2 is a plan view of a semiconductor layer pattern according to a first exemplary embodiment of the present invention; ...
FIG. 2F illustrates a cross-sectional view, which includes a portion of a wafer processed according to an embodiment of the invention, corresponding to final step in the flowchart in FIG. 1. DETAILED DESCRIPTION OF THE INVENTION The present invention is directed to a method for fabricating a ...
FIG. 1B is a cross-sectional view of a Type-II epi-less isolation structure with shallow trenches. FIG. 2A is a chart of the process flow for the fabrication of an epi-less isolated bipolar-CMOS-DMOS (BCD) arrangement through the formation of the gate. FIG. 2B is a chart of the pr...
FIG.1illustrates a flow chart of a method for forming a semiconductor device having a vertically-oriented complementary transistor, according to one or more aspects of the present disclosure. FIGS.2-39illustrate fragmentary cross-sectional views of a workpiece during a fabrication process according to...
Attorney, Agent or Firm: Wegman Hessler / Crossbar Parent Case Data: REFERENCE TO RELATED APPLICATIONS The present application for patent is a continuation of U.S. patent application Ser. No. 14/717,185 entitled “NON-VOLATILE MEMORY CELL UTILIZING VOLATILE SWITCHING TWO TERMINAL DEVICE AND A ...
FIG. 14 illustrates a schematic cross-sectional view of a semiconductor device including a LDMOS transistor. DETAILED DESCRIPTION In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific emb...
CROSS REFERENCE TO RELATED APPLICATION This application is a continuation of U.S. patent application Ser. No. 14/946,545 filed Nov. 19, 2015, which is based upon and claims the benefit of priority from Japanese Patent Application No. 2014-244925 filed on Dec. 3, 2014 including the specific...