Material = Struct = Pc >W Vcb >V Vce >V Veb >V Ic >A Tj >C Ft >MHz Cc <pF Hfe > Caps =+similar ones R1 =kOhm R2 =kOhm R1/R2 = Empty or zero fields are ignored during the search! How to choose a replacement for a
Transition Frequency (ft): 200 MHz Collector Capacitance (Cc): 4.5 pF Forward Current Transfer Ratio (hFE), MIN: 420 Noise Figure, dB: - Package:TO92 BC549C Substitution -BJT ⓘCross-Reference Search BC549C Datasheet (PDF) 0.1. Size:314K onsemi ...
Book 2020, Electronics and Communications for Scientists and Engineers (Second Edition)Martin Plonus Chapter Audio-frequency power amplifiers 8.4.2 The VBe multiplier To remove the last little crossover ‘blip’ from the output waveform, a ‘VBE multiplier’ is commonly used instead of the two dio...
Explore book 5.1 Junction Diodes 139 5.1.1 Basic Equations 5.1.2 Equivalent circuit 5.2 Bipolar Junction Transistor 142 5.2.1 Basic equations 5.2.2 Internal Transistor and Base Resistance 5.2.3 Emitter Periphery Effects 5.2.4 Extrinsic Transistor Regions 5.2.5 Other Effects 5.2.6 Equivalent circuits...
This makes it possible to explain the role and function of current gain in various configurations as well as to explain the principles of a two-transistor equivalent of a thyristor structure. The breakdown mode is then introduced (using the multiplication factor M) into the two-transistor model ...
- BJT ⓘ Cross-Reference Search PHD13005 Datasheet (PDF) ..1. Size:181K nxp phd13005.pdf PHD13005NPN power transistor with integrated diodeRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switchin...
- BJT ⓘ Cross-Reference SearchECH8502-TL-H Datasheet (PDF) 7.1. Size:441K sanyo ech8502.pdf ECH8502Ordering number : ENA1758SANYO SemiconductorsDATA SHEETPNP/NPN Epitaxial Planar Silicon TransistorsECH8502Gate Drive ApplicationsFeatures Composite type, facilitating high-density mounting ...
IV.D.1 Incremental Equivalent Circuit and Cutoff Frequency The simplified small-signal equivalent circuit of a MOSFET is essentially the same as that of a JFET (Fig. 4). All the extraneous parasitic capacitances and resistances are omitted, and only the intrinsic device is considered. Because of...
1. A cross-coupled transistor circuit, comprising: a first PMOS transistor defined by a gate electrode extending along a first gate electrode track; a second PMOS transistor defined by a gate electrode extending along a second gate electrode track; a first NMOS transistor defined by a gate elect...
pixel electrode240and neighboring pixel electrode246. An end of the pixel electrode is formed on the source wiring207to form an overlapped portion thereby to enhance the light-shielding performance by shutting off stray light. FIG. 3 shows an equivalent circuit of the above pixel. In this specif...