Material = Struct = Pc >W Vcb >V Vce >V Veb >V Ic >A Tj >C Ft >MHz Cc <pF Hfe > Caps =+similar ones R1 =kOhm R2 =kOhm R1/R2 = Empty or zero fields are ignored during the search! How to choose a replacement for a bipolar transistor 🔗 ...
Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 200 MHz Collector Capacitance (Cc): 4.5 pF Forward Current Transfer Ratio (hFE), MIN: 420 Noise Figure, dB: - Package:TO92 BC549C Substitution -BJT ⓘCross-Reference Search ...
1 Answer Answer by Cosertrut Replacing an out-of-production transistor can be tricky, especially without a deep understanding of electronics. To help you find a suitable replacement for the J3303/F19 Panasonic transistor,I recommend you look at the cross-reference list or equivalent transistor data...
Cross-section view of a 1T1C DRAM cell with a trench capacitor. The storage capacitor is formed from a trench capacitor structure that dives deeply into the active silicon area. Alternatively, some DRAM device manufacturers instead use cells with a stacked capacitor structure that sits in between...
(f) Schematic showing the cross section of the a-IGZO TFT. as sputtering. These AOS transistors have been utilized as drive modules of backplanes for the production of high-speed switching devices used in high-motion-speed sensors/displays with ultra-high definition, such as active-matrix ...
there is also useful information embedded in the response of calcium and potassium ISMs. All three ISMs are highly selective and exhibit the highest sensitivity towards their target analytes. They also, however, exhibit some cross-sensitivity to other ions. Other researchers have observed similar beha...
Fig. 1c shows the optical image of the manufactured GO/Gr FET, where the GO/Gr sheet passes fully cross the source and drain form channel (the red dotted rectangle). The GO nanosheets were stacked on the graphene surface through π-π stacking to form a GO/Gr heterostructure. To confirm...
Cross Reference Search Search require 3 characters or more. About information presented in this cross reference The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all...
Field of Search: 317/235Z, 357/20, 357/34, 357/36 View Patent Images: Download PDF 3943546 US Patent References: 3191070 Transistor agg device 1965-06-22 Jones et al. 317/235Z Attorney, Agent or Firm: Spencer & Kaye Parent Case Data: CROSS-REFERENCE TO RELATED PATENT APPLICATION This ...
10, 2005, Search Report. PCT/2004/030367, Feb. 10, 2005, Written Opinion. PCT/2004/030367, Mar. 21, 2006, IPRP. Attorney, Agent or Firm: Wells St. John P.S. Parent Case Data: CROSS-REFERENCE TO RELATED APPLICATIONS The present application is a continuation of U.S. application ...