US6064088 * 1998年6月15日 2000年5月16日 Xemod, Inc. RF power MOSFET device with extended linear region of transconductance characteristic at low drain currentUS6064088 1998年6月15日 2000年5月16日 Xemod, Inc. RF power MOSFET
source and drain terminals of the transistor M3. The transistor M3may be one of a metal oxide silicon field effect (MOSFET) transistor, a field effect transistor, and a bipolar junction transistor, and is a MOSFET in the illustrated embodiment....
MOSFETarbitrary doping profilecurrent continuitychannel regionFor MOSFETs with a non-uniformly doped channel (NUDC), an efficient modeling method ensuring current continuity in the channel region, has been developed. Using the same set of equations, we can generate continuous and differentiable drain ...
A semiconductor MOSFET device having a decreased length of the channel region is disclosed. In one embodiment of the device, each gate includes three gate subregions. An enhancement drift drain region underlies the first gate subregion, a channel region underlies the third gate subregion, and ...
The procedure is based on measurement of the transconductance-to-current ratio (giVfe) characteristic of the MOSFET in the linear region, from weak to moderate inversion. For the extraction of both the effective channel length and width, the gm/fo characteristic is determined for several devices ...
In this specification, the term "driving capacity" means the emitter area for a bipolar transistor and the gate-width to gate-length ratio (W/L) for an MOSFET. In another preferred embodiment of the invention, the input voltage is divided by resistive dividers and is applied to the squarer...
6281753MOSFET single-pair differential amplifier having an adaptive biasing scheme for rail-to-rail input capability2001-08-28Corsi et al.330/258 5789949Wide common mode range comparator and method1998-08-04Giordano et al.327/63 5729177Common mode rail-to-rail amplifier with a constant transconduct...