MOSFETarbitrary doping profilecurrent continuitychannel regionFor MOSFETs with a non-uniformly doped channel (NUDC), an efficient modeling method ensuring current continuity in the channel region, has been developed. Using the same set of equations, we can generate continuous and differentiable drain ...
1. A delay line, comprising: a compensating circuit having at least one transistor and being configured to provide a bias signal at an output node having a magnitude that is a function of a transconductance of the at least one transistor in the compensating circuit; and a plurality of delay...
gates.In this paper, we present a generic surface potential based current voltage (I-V) model for doped or undoped asymmetric Double Gate (DG) MOSFET... M Shahnawaz 被引量: 0发表: 2010年 Modeling the current of a double-gate MOSFET with very thin active region taking into account mobilit...
A semiconductor MOSFET device having a decreased length of the channel region is disclosed. In one embodiment of the device, each gate includes three gate subregions. An enhancement drift drain region underlies the first gate subregion, a channel region underlies the third gate subregion, and ...
Practical/ MOSFET/ transconductance degradationgate-modulated generation currentnMOSFETLDDsingle electron-injection-stressG curve shifts rightwardEISeffective drain voltage diminishstress time n-th powerneutralizationThe degradation of transconductance(G) of a gate-modulated generation current I GD in a LDD ...
US6064088 * 1998年6月15日 2000年5月16日 Xemod, Inc. RF power MOSFET device with extended linear region of transconductance characteristic at low drain currentUS6064088 1998年6月15日 2000年5月16日 Xemod, Inc. RF power MOSFET device with extended linear region of transconductance characteristic ...
The procedure is based on the expressions of the Advanced Compact MOSFET (ACM) model, valid in all regimes of operation, which assures physical meaning, consistency and reliability for the results. The extraction of the threshold voltage is accomplished over a single measured drain current ...
CMOS Analog Design Using All-Region MOSFET Modeling; Cambridge University Press: Cambridge, UK, 2010. [Google Scholar] Galup-Montoro, C.; Schneider, M.C.; Loss, I.J. Series-parallel association of FET’s for high gain and high frequency applications. IEEE J. Solid-State Circuits 1994, ...